Evidence for direct and indirect gap in FeSi from electron tunneling spectroscopy
We report electron tunneling spectroscopy studies on single crystalline FeSi sample performed for the case of homogeneous tunnel junction contacts and for the case of counter electrodes made from Pt-Rh alloy. Our results reveal that while the tunneling spectroscopy in the configuration with Pt-Rh ti...
Gespeichert in:
Veröffentlicht in: | arXiv.org 2020-10 |
---|---|
Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We report electron tunneling spectroscopy studies on single crystalline FeSi sample performed for the case of homogeneous tunnel junction contacts and for the case of counter electrodes made from Pt-Rh alloy. Our results reveal that while the tunneling spectroscopy in the configuration with Pt-Rh tip is preferably sensitive to the d-partial density of states and to the indirect energy gap, the FeSi-FeSi type of tunnel junction yields spectroscopic information on the c-partial density of states and on the direct gap in FeSi. |
---|---|
ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.2010.10838 |