Morphology Control in van der Waals Epitaxy of Bismuth Telluride Topological Insulators
Bismuth telluride have regained significant attention as a prototype of topological insulator. Thin films of high quality have been investigated as a basic platform for novel spintronic devices. Low mobility of bismuth and high desorption coefficient of telluride compose a scenario where growth para...
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| Zusammenfassung: | Bismuth telluride have regained significant attention as a prototype of
topological insulator. Thin films of high quality have been investigated as a
basic platform for novel spintronic devices. Low mobility of bismuth and high
desorption coefficient of telluride compose a scenario where growth parameters
have drastic effects on structural and electronic properties of the films.
Recently [J. Phys. Chem. C 2019, 123, 24818-24825], a detailed investigation
has been performed on the dynamics of defects in epitaxial films of this
material, revealing the impact of film/substrate lattice misfit on the films'
lateral coherence. Very small lattice misfit ( |
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| DOI: | 10.48550/arxiv.2008.02180 |