Full control of Co valence in isopolar LaCoO3 / LaTiO3 perovskite heterostructures via interfacial engineering

We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and ST...

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Veröffentlicht in:arXiv.org 2019-09
Hauptverfasser: Araizi-Kanoutas, Georgios, Geessinck, Jaap, Gauquelin, Nicolas, Smit, Steef, Verbeek, Xanthe, Mishra, Shrawan K, Bencok, Peter, Schlueter, Christoph, Tien-Lin, Lee, Krishnan, Dileep, Verbeeck, Jo, Rijnders, Guus, Koster, Gertjan, Golden, Mark S
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Sprache:eng
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Zusammenfassung:We report charge-transfer up to a single electron per interfacial unit cell across non-polar heterointerfaces from the Mott insulator LaTiO3 to the charge transfer insulator LaCoO3. In high-quality bi- and tri-layer systems grown using pulsed laser deposition, soft X-ray absorption, dichroism and STEM-EELS are used to probe the cobalt 3d-electron count and provide an element-specific investigation of the magnetic properties. The experiments prove a deterministically-tunable charge transfer process acting in the LaCoO3 within three unit cells of the heterointerface, able to generate full conversion to 3d7 divalent Co, which displays a paramagnetic ground state. The number of LaTiO3 / LaCoO3 interfaces, the thickness of an additional "break" layer between the LaTiO3 and LaCoO3, and the LaCoO3 film thickness itself in tri-layers provide a trio of sensitive control knobs for the charge transfer process, illustrating the efficacy of O2p-band alignment as a guiding principle for property design in complex oxide heterointerfaces.
ISSN:2331-8422
DOI:10.48550/arxiv.1909.05247