Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br

APL Materials 7, 101110 (2019) We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets wh...

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Hauptverfasser: Wang, Zeji, Cheng, Shuyu, Chang, Tay-Rong, Ma, Wenlong, Xu, Xitong, Zhou, Huibin, Wang, Guangqiang, Gui, Xin, Zhu, Haipeng, Zhu, Zhen, Zheng, Hao, Jia, Jinfeng, Wang, Junfeng, Xie, Weiwei, Jia, Shuang
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Sprache:eng
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Zusammenfassung:APL Materials 7, 101110 (2019) We report the crystal and electronic structures of a non-centrosymmetric quasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br. The Fermi surface of this layered compound consists of 2D-like, topological trivial electron and non-trivial hole pockets which host a Dirac cone along the kz direction. Our transport measurements on the single crystals show highly anisotropic, compensated low-density electrons and holes, both of which exhibit ultrahigh mobility at a level of 10^5cm^2V^-1s^-1 at low temperature. The highly mobile, compensated carriers lead a non-saturated, parabolic magnetoresistance as large as 3*10^5 in single-crystalline AuTe2Br in a magnetic field up to 58 T.
DOI:10.48550/arxiv.1909.04296