InGaAsP/InP uni-travelling-carrier photodiode at 1064nm wavelength

InGaAsP/InP uni-travelling-carrier photodiode at 1064nm wavelength

High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as high as 19.5 dBm at 13 GHz. This structure can achieve low d...

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Veröffentlicht in:arXiv.org 2019-06
Hauptverfasser: Xie, Zhiyang, Chen, Yaojiang, Zhang, Ningtao, Chen, Baile
Format: Artikel
Sprache:eng
Schlagworte:
Bias
Dark current
Gallium indium arsenide phosphide
Indium phosphides
Parameters
Photodiodes
Physics - Applied Physics
Quantum efficiency
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Zusammenfassung:High-speed back-illuminated uni-traveling-carrier photodiodes at 1064nm were demonstrated grown on InP with 3dB bandwidth of 17.8 GHz at -5 V bias, using InGaAsP as absorption layer. PDs with 40um diameter deliver RF output power levels as high as 19.5 dBm at 13 GHz. This structure can achieve low dark current density of 10 nA per cm2 at -5V bias and quantum efficiency of 45.2% at 1064nm. An analytical model based on S-parameter fitting was built to extract parameter to access the bandwidth limiting factors.
ISSN:2331-8422
DOI:10.48550/arxiv.1906.06983