Shifting of Fermi Level and Realization of Topological Insulating Phase in the Oxyfluoride BaBiO$_2$F
The disadvantage of BaBiO$_3$ of not being a topological insulator despite having symmetry protected Dirac state is overcome by shifting the Fermi level (E$_F$) via fluorination. The DFT calculations reveal that the fluorination neither affects the spin-orbit coupling nor the parity of the states, b...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The disadvantage of BaBiO$_3$ of not being a topological insulator despite
having symmetry protected Dirac state is overcome by shifting the Fermi level
(E$_F$) via fluorination. The DFT calculations reveal that the fluorination
neither affects the spin-orbit coupling nor the parity of the states, but it
acts as a perfect electron donor to shift the E$_F$. We find that 33 %
fluorination is sufficient to shift the E$_F$ by $\sim$ 2 eV so that the
invariant Dirac state lies on it to make BaBiO$_2$F a topological insulator.
The fluorinated cubic compound can be experimentally synthesized as the phonon
studies predict dynamical stability above $\sim$ 500 K. Furthermore, the Dirac
states are found to be invariant against the low-temperature phase lattice
distortion which makes the structure monoclinic. The results carry practical
significance as they open up the possibility of converting the family of
superconducting oxides, ABiO$_3$ (A = Na, K, Cs, Ba, Sr, Ca), to real
topological insulator through appropriate fluorination. |
---|---|
DOI: | 10.48550/arxiv.1901.08751 |