Study of Silicon Photomultiplier Performance in External Electric Fields

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon dete...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	arXiv.org 2018-07
Hauptverfasser:	Sun, X L, Tolba, T, Cao, G F, P Lv, Odian, A, Vachon, F, Alamre, A, Arnquist, I J, Barbeau, P S, Bourque, F, Brown, E, Brunner, T, Cao, L, Cen, W R, Chambers, C, Chiu, M, Cleveland, B, Coon, M, Craycraft, A, Dalmasson, J, Daniels, T, Daugherty, S J, Daughhetee, J, Delaquis, S, DeVoe, R, Ding, Y Y, Dolinski, M J, Fairbank, D, Fairbank, W, Feyzbakhsh, S, Fierlinger, P, Gallina, G, Giacomini, G, Gornea, R, Gratta, G, Hansen, E V, Harris, D, Hoppe, E W, Hößl, J, Hufschmidt, P, Hughes, M, Ito, Y, Iverson, A, Jessiman, C, Jewell, M J, Kodroff, D, Koffas, T, Krücken, R, Kuchenkov, A, Kumar, K S, Larson, A, G Li, S Li, Z Li, Licciardi, C, MacLellan, R, Michel, T, Moe, M, Mong, B, Moore, D C, Murray, K, Newby, R J, Ning, Z, Nolet, F, Nusair, O, Odgers, K, Oriunno, M, Orrell, J L, Ostrovskiy, I, Overman, C T, Pocar, A, Qiu, D, Radeka, V, Raguzin, E, Retière, F, Robinson, A, Rossignol, T, Roy, N, Sangiorgio, S, Schneider, J, Sinclair, D, Soma, A K, St-Hilaire, G, Stekhanov, V, Stiegler, T, Tarka, M, Totev, T I, Tsang, R, Tsang, T, Veeraraghavan, V, Visser, G, Watkins, J, Weber, M, Wrede, G, Wu, W H, Y -R Yen, Zeldovich, O, Zhao, J, Zhou, Y, Ziegler, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric field strength Electric fields Photomultiplier tubes Physics - Instrumentation and Detectors Silicon
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No observable physical damage to the bulk or surface of the devices was caused by the exposure.
ISSN:	2331-8422
DOI:	10.48550/arxiv.1807.03007