Quantitative strain analysis of InAs/GaAs quantum dot materials

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjorn-Ove, Reenaas, Turid Worren
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science Physics - Mesoscale and Nanoscale Physics
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!