Quantitative strain analysis of InAs/GaAs quantum dot materials

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...

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Hauptverfasser: Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjorn-Ove, Reenaas, Turid Worren
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Sprache:eng
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Zusammenfassung:Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattice in a wide region that extends several nanometers into the GaAs spacer layer below and above the QDs. Finally, we show how V-shaped dislocations originating at the QD/GaAs interface efficiently remove most of the lattice mismatch induced tetragonal distortions in and around the QD.
DOI:10.48550/arxiv.1611.08911