Confining Metal-Halide Perovskites in Nanoporous Thin Films

Controlling size and shape of semiconducting nanocrystals advances nanoelectronics and photonics. Quantum confined, inexpensive, solution derived metal halide perovskites offer narrow band, color-pure emitters as integral parts of next-generation displays and optoelectronic devices. We use nanoporou...

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Veröffentlicht in:arXiv.org 2017-08
Hauptverfasser: Demchyshyn, Stepan, Roemer, Janina Melanie, Groiß, Heiko, Heilbrunner, Herwig, Ulbricht, Christoph, Apaydin, Dogukan, Rütt, Uta, Bertram, Florian, Hesser, Günter, Scharber, Markus, Nickel, Bert, Sariciftci, Niyazi Serdar, Bauer, Siegfried, Głowacki, Eric Daniel, Kaltenbrunner, Martin
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Sprache:eng
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Zusammenfassung:Controlling size and shape of semiconducting nanocrystals advances nanoelectronics and photonics. Quantum confined, inexpensive, solution derived metal halide perovskites offer narrow band, color-pure emitters as integral parts of next-generation displays and optoelectronic devices. We use nanoporous silicon and alumina thin films as templates for the growth of perovskite nanocrystallites directly within device-relevant architectures without the use of colloidal stabilization. We find significantly blue shifted photoluminescence emission by reducing the pore size; normally infrared-emitting materials become visibly red, green-emitting materials cyan and blue. Confining perovskite nanocrystals within porous oxide thin films drastically increases photoluminescence stability as the templates auspiciously serve as encapsulation. We quantify the template-induced size of the perovskite crystals in nanoporous silicon with microfocus high-energy X-ray depth profiling in transmission geometry, verifying the growth of perovskite nanocrystals throughout the entire thickness of the nanoporous films. Low-voltage electroluminescent diodes with narrow, blue-shifted emission fabricated from nanocrystalline perovskites grown in embedded nanoporous alumina thin films substantiate our general concept for next generation photonic devices.
ISSN:2331-8422
DOI:10.48550/arxiv.1607.04661