Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping
High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully monolithically grown on on-axis Si (100) substrates via a Ge layer formed by aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have reflectivity spectra comparable to those grown on conventional bulk off...
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Zusammenfassung: | High quality AlxGa1-xAs distributed Bragg reflectors (DBRs) were successfully
monolithically grown on on-axis Si (100) substrates via a Ge layer formed by
aspect ratio trapping (ART) technique. The GaAs/ART-Ge/Si-based DBRs have
reflectivity spectra comparable to those grown on conventional bulk off-cut
GaAs substrates and have smooth morphology, and good periodicity and
uniformity. Anitphase domain formation is significantly reduced in GaAs on
ART-Ge/Si substrates, and etch pit density of the GaAs base layer on the ART-Ge
substrates ranges from 10^5 to 6 x 10^6 cm^(-2). These results paved the way
for future VCSEL growth and fabrication on these ART-Ge substrates and also
confirm that virtual Ge substrates via ART technique are effective Si platforms
for optoelectronic integrated circuits. |
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DOI: | 10.48550/arxiv.1601.04108 |