Photoinduced tunability of the Reststrahlen band in 4H-SiC
Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to \(actively\) tune these effects remains elusive. By photoexcitin...
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Veröffentlicht in: | arXiv.org 2015-11 |
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Sprache: | eng |
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Zusammenfassung: | Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to \(actively\) tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" where the permittivity is negative due to charge oscillations of the polar optical phonons in the mid-infrared. We infer carrier-induced changes in the permittivity required for useful tunability (~ 40 cm\(^{-1}\)) in nanoscale resonators, providing a direct avenue towards the realization of actively tunable nanophotonic devices in the mid-infrared to terahertz spectral range. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1511.09428 |