Reliable determination of the Cu/n-Si Schottky barrier height by using in-device hot-electron spectroscopy

We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature indepe...

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Veröffentlicht in:arXiv.org 2015-10
Hauptverfasser: Parui, Subir, Atxabal, Ainhoa, Ribeiro, Mário, Bedoya-Pinto, Amilcar, Sun, Xiangnan, Llopis, Roger, Casanova, Fèlix, Hueso, Luis E
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Sprache:eng
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Zusammenfassung:We show the operation of a Cu/Al_2O_3/Cu/n-Si hot-electron transistor for the straightforward determination of a metal/semiconductor energy barrier height even at temperatures below carrier-freeze out in the semiconductor. The hot-electron spectroscopy measurements return a fairly temperature independent value for the Cu/n-Si barrier of 0.66 \(\pm\) 0.04 eV at temperatures below 180 K, in substantial accordance with mainstream methods based on complex fittings of either current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Cu/n-Si hot-electron transistors exhibit an OFF current of ~2 * 10^-13 A, an ON/OFF ratio of ~10^5 and an equivalent subtreshold swing of ~96 mV/dec at low temperatures, which are suitable values for potential high frequency devices.
ISSN:2331-8422
DOI:10.48550/arxiv.1510.06854