Real-space formulation of orbital-free density functional theory using finite-element discretization: The case for Al, Mg, and Al-Mg intermetallics
We propose a local real-space formulation for orbital-free DFT with density dependent kinetic energy functionals and a unified variational framework for computing the configurational forces associated with geometry optimization of both internal atomic positions as well as the cell geometry. The prop...
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Zusammenfassung: | We propose a local real-space formulation for orbital-free DFT with density
dependent kinetic energy functionals and a unified variational framework for
computing the configurational forces associated with geometry optimization of
both internal atomic positions as well as the cell geometry. The proposed
real-space formulation, which involves a reformulation of the extended
interactions in electrostatic and kinetic energy functionals as local
variational problems in auxiliary potential fields, also readily extends to
all-electron orbital-free DFT calculations that are employed in warm dense
matter calculations. We use the local real-space formulation in conjunction
with higher-order finite-element discretization to demonstrate the accuracy of
orbital-free DFT and the proposed formalism for the Al-Mg materials system,
where we obtain good agreement with Kohn-Sham DFT calculations on a wide range
of properties and benchmark calculations. Finally, we investigate the cell-size
effects in the electronic structure of point defects, in particular a
mono-vacancy in Al. We unambiguously demonstrate that the cell-size effects
observed from vacancy formation energies computed using periodic boundary
conditions underestimate the extent of the electronic structure perturbations
created by the defect. On the contrary, the bulk Dirichlet boundary conditions,
accessible only through the proposed real-space formulation, which correspond
to an isolated defect embedded in the bulk, show cell-size effects in the
defect formation energy that are commensurate with the perturbations in the
electronic structure. Our studies suggest that even for a simple defect like a
vacancy in Al, we require cell-sizes of $\sim 10^3$ atoms for convergence in
the electronic structure. |
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DOI: | 10.48550/arxiv.1504.06368 |