Two-dimensional electron gas in monolayer InN quantum wells

Two-dimensional electron gas in monolayer InN quantum wells

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and...

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Veröffentlicht in:arXiv.org 2014-08
Hauptverfasser: Pan, W, Dimakis, E, Wang, G T, Moustakas, T D, Tsui, D C
Format: Artikel
Sprache:eng
Schlagworte:
Electron density
Electron gas
Embedded systems
Monolayers
Physics - Mesoscale and Nanoscale Physics
Quantum wells
Temperature dependence
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Zusammenfassung:We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.
ISSN:2331-8422
DOI:10.48550/arxiv.1408.3435