Large resistivity change and phase transition in LiMnAs

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here...

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Hauptverfasser: Beleanu, A, Kiss, J, Kreiner, G, Köhler, C, Müchler, L, Schnelle, W, Burkhardt, U, Chadov, S, Medvediev, S, Ebke, D, Cordier, G, Albert, B, Hoser, A, Bernardi, F, Larkin, T. I, Pröpper, D, Boris, A. V, Keimer, B, Felser, C
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Sprache:eng
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Zusammenfassung:Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. From neutron and X-ray diffraction measurements on LiMnAs we have observed a magnetic phase transition corresponding to the Neel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory (DFT) calculations.
DOI:10.48550/arxiv.1307.6404