Extended point defects in crystalline materials: Ge and Si
B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high te...
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| creator | Cowern, Nick E B Simdyankin, Sergei Ahn, Chihak Bennett, Nick S Goss, Jonathan P Hartmann, Jean-Michel Pakfar, Ardechir Hamm, Silke Valentin, Jérôme Napolitani, Enrico De Salvador, Davide Bruno, Elena Mirabella, Salvatore |
| description | B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Computational modelling suggests that morphs exist in both self-interstitial and vacancy-like forms, and are crucial for diffusion and defect dynamics in Ge, Si and probably many other crystalline solids. |
| doi_str_mv | 10.48550/arxiv.1210.2902 |
| format | Article |
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| subjects | Crystal defects Crystal structure Crystallinity Diffusion Entropy Germanium High temperature Migration Physics - Materials Science Physics - Mesoscale and Nanoscale Physics Point defects Saddle points Silicon |
| title | Extended point defects in crystalline materials: Ge and Si |
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