Extended point defects in crystalline materials: Ge and Si

B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high te...

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Veröffentlicht in:arXiv.org 2013-03
Hauptverfasser: Cowern, Nick E B, Simdyankin, Sergei, Ahn, Chihak, Bennett, Nick S, Goss, Jonathan P, Hartmann, Jean-Michel, Pakfar, Ardechir, Hamm, Silke, Valentin, Jérôme, Napolitani, Enrico, De Salvador, Davide, Bruno, Elena, Mirabella, Salvatore
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Sprache:eng
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Zusammenfassung:B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Computational modelling suggests that morphs exist in both self-interstitial and vacancy-like forms, and are crucial for diffusion and defect dynamics in Ge, Si and probably many other crystalline solids.
ISSN:2331-8422
DOI:10.48550/arxiv.1210.2902