The Interplay of Topological Surface and Bulk Electronic States in Bi2Se3
In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab m...
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Veröffentlicht in: | arXiv.org 2012-10 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the expected Dirac cone. Density functional calculations using a slab model and analysis of the partial density-of-states show that the background is consistent with bulk-like states with small amplitudes at the surface. The topological surface states coexist with bulk-like states in the valence band, appearing as a shoulder in the projected band structure. These results strongly support the picture suggested by recent scattering experiments of the quantum interference of topological and bulk-like surface states. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1210.1874 |