Homogeneous switching in ultrathin ferroelectric BaTiO3 films

Switching kinetics in ultrathin epitaxial BaTiO3 films confirms the existence of the homogeneous switching (without domains) in ultrathin ferroelectric films. We suppose that the homogeneous switching in ultrathin films is a common phenomenon for all ferroelectric materials.

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Bibliographische Detailangaben
Hauptverfasser:	Ducharme, S, Fridkin, V, Gaynutdinov, R, Minnekaev, M, Tolstikhina, A, Zenkevich, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Physics - Materials Science Physics - Mesoscale and Nanoscale Physics
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Beschreibung
Zusammenfassung:	Switching kinetics in ultrathin epitaxial BaTiO3 films confirms the existence of the homogeneous switching (without domains) in ultrathin ferroelectric films. We suppose that the homogeneous switching in ultrathin films is a common phenomenon for all ferroelectric materials.
DOI:	10.48550/arxiv.1204.4792