Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman d...
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| creator | Hayes, Robert R Kiselev, Andrey A Borselli, Matthew G Bui, Steven S CrokeIII, Edward T Deelman, Peter W Maune, Brett M Milosavljevic, Ivan Moon, Jeong-Sun Ross, Richard S Schmitz, Adele E Gyure, Mark F Hunter, Andrew T |
| description | We have observed the Zeeman-split excited state of a spin-1/2 multi-electron
Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in
magnetic fields up to 2 T. Using a new step-and-reach technique, we have
experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman
doublet. We have also measured T1 of single- and multi-electron spins in InGaAs
quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than
those for InGaAs dots for comparable magnetic field strengths, but both
approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for
InGaAs). |
| doi_str_mv | 10.48550/arxiv.0908.0173 |
| format | Article |
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Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in
magnetic fields up to 2 T. Using a new step-and-reach technique, we have
experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman
doublet. We have also measured T1 of single- and multi-electron spins in InGaAs
quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than
those for InGaAs dots for comparable magnetic field strengths, but both
approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for
InGaAs).</description><identifier>DOI: 10.48550/arxiv.0908.0173</identifier><language>eng</language><subject>Physics - Mesoscale and Nanoscale Physics</subject><creationdate>2009-08</creationdate><rights>http://arxiv.org/licenses/nonexclusive-distrib/1.0</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>228,230,780,885</link.rule.ids><linktorsrc>$$Uhttps://arxiv.org/abs/0908.0173$$EView_record_in_Cornell_University$$FView_record_in_$$GCornell_University$$Hfree_for_read</linktorsrc><backlink>$$Uhttps://doi.org/10.48550/arXiv.0908.0173$$DView paper in arXiv$$Hfree_for_read</backlink></links><search><creatorcontrib>Hayes, Robert R</creatorcontrib><creatorcontrib>Kiselev, Andrey A</creatorcontrib><creatorcontrib>Borselli, Matthew G</creatorcontrib><creatorcontrib>Bui, Steven S</creatorcontrib><creatorcontrib>CrokeIII, Edward T</creatorcontrib><creatorcontrib>Deelman, Peter W</creatorcontrib><creatorcontrib>Maune, Brett M</creatorcontrib><creatorcontrib>Milosavljevic, Ivan</creatorcontrib><creatorcontrib>Moon, Jeong-Sun</creatorcontrib><creatorcontrib>Ross, Richard S</creatorcontrib><creatorcontrib>Schmitz, Adele E</creatorcontrib><creatorcontrib>Gyure, Mark F</creatorcontrib><creatorcontrib>Hunter, Andrew T</creatorcontrib><title>Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots</title><description>We have observed the Zeeman-split excited state of a spin-1/2 multi-electron
Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in
magnetic fields up to 2 T. Using a new step-and-reach technique, we have
experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman
doublet. We have also measured T1 of single- and multi-electron spins in InGaAs
quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than
those for InGaAs dots for comparable magnetic field strengths, but both
approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for
InGaAs).</description><subject>Physics - Mesoscale and Nanoscale Physics</subject><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>GOX</sourceid><recordid>eNotzztPwzAUQGEvDKiwMyGP7ZDUr8TOiAqUSpEYmj26qa8lS7VTbAfBv0cFprMd6SPkgbNamaZhW0hf_rNmHTM141rekufeOyw-IA0IeUkYMJZM1wPf0NlRPOOppDnSfPExUx_p0W-Pfo_0Y4FYlkDtXPIduXFwznj_3xUZXl-G3VvVv-8Pu6e-graRlRSTY9Z2WqAxYNUJFefaMtWJSfBJO265BWla6ZxqocFO6JZNHCxixxzIFXn82_4qxkvyAdL3eNWMV438AWxnRHI</recordid><startdate>20090802</startdate><enddate>20090802</enddate><creator>Hayes, Robert R</creator><creator>Kiselev, Andrey A</creator><creator>Borselli, Matthew G</creator><creator>Bui, Steven S</creator><creator>CrokeIII, Edward T</creator><creator>Deelman, Peter W</creator><creator>Maune, Brett M</creator><creator>Milosavljevic, Ivan</creator><creator>Moon, Jeong-Sun</creator><creator>Ross, Richard S</creator><creator>Schmitz, Adele E</creator><creator>Gyure, Mark F</creator><creator>Hunter, Andrew T</creator><scope>GOX</scope></search><sort><creationdate>20090802</creationdate><title>Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots</title><author>Hayes, Robert R ; Kiselev, Andrey A ; Borselli, Matthew G ; Bui, Steven S ; CrokeIII, Edward T ; Deelman, Peter W ; Maune, Brett M ; Milosavljevic, Ivan ; Moon, Jeong-Sun ; Ross, Richard S ; Schmitz, Adele E ; Gyure, Mark F ; Hunter, Andrew T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a653-32bf0dd972e88ad4ce4117d0492b21b7f1d1da3863ff46a5e92760b1adee90fa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Physics - Mesoscale and Nanoscale Physics</topic><toplevel>online_resources</toplevel><creatorcontrib>Hayes, Robert R</creatorcontrib><creatorcontrib>Kiselev, Andrey A</creatorcontrib><creatorcontrib>Borselli, Matthew G</creatorcontrib><creatorcontrib>Bui, Steven S</creatorcontrib><creatorcontrib>CrokeIII, Edward T</creatorcontrib><creatorcontrib>Deelman, Peter W</creatorcontrib><creatorcontrib>Maune, Brett M</creatorcontrib><creatorcontrib>Milosavljevic, Ivan</creatorcontrib><creatorcontrib>Moon, Jeong-Sun</creatorcontrib><creatorcontrib>Ross, Richard S</creatorcontrib><creatorcontrib>Schmitz, Adele E</creatorcontrib><creatorcontrib>Gyure, Mark F</creatorcontrib><creatorcontrib>Hunter, Andrew T</creatorcontrib><collection>arXiv.org</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hayes, Robert R</au><au>Kiselev, Andrey A</au><au>Borselli, Matthew G</au><au>Bui, Steven S</au><au>CrokeIII, Edward T</au><au>Deelman, Peter W</au><au>Maune, Brett M</au><au>Milosavljevic, Ivan</au><au>Moon, Jeong-Sun</au><au>Ross, Richard S</au><au>Schmitz, Adele E</au><au>Gyure, Mark F</au><au>Hunter, Andrew T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots</atitle><date>2009-08-02</date><risdate>2009</risdate><abstract>We have observed the Zeeman-split excited state of a spin-1/2 multi-electron
Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in
magnetic fields up to 2 T. Using a new step-and-reach technique, we have
experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman
doublet. We have also measured T1 of single- and multi-electron spins in InGaAs
quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than
those for InGaAs dots for comparable magnetic field strengths, but both
approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for
InGaAs).</abstract><doi>10.48550/arxiv.0908.0173</doi><oa>free_for_read</oa></addata></record> |
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| subjects | Physics - Mesoscale and Nanoscale Physics |
| title | Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots |
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