Tunable Charge-Transport Properties of Ih -C80 Endohedral Metallofullerenes: Investigation of La2@C80, Sc3N@C80, and Sc3C2@C80

Fullerene crystals or films have drawn much interest because they are good candidates for use in the construction of electronic devices. The results of theoretical calculations revealed that the conductivity properties of Ih -C80 endohedral metallofullerenes (EMFs) vary depending on the encapsulated metal species. We experimentally investigated the solid-state structures and charge-carrier mobilities of Ih -C80 EMFs La2@C80, Sc3N@C80, and Sc3C2@C80. The thin film of Sc3C2@C80 exhibits a high electron mobility μ = 0.13 cm2 V–1 s–1 under normal temperature and atmospheric pressure, as determined using flash-photolysis time-resolved microwave conductivity measurements. This electron mobility is 2 orders of magnitude higher than the mobility of La2@C80 or Sc3N@C80.