Highly Asymmetric Phthalocyanine as a Sensitizer of Graphitic Carbon Nitride for Extremely Efficient Photocatalytic H2 Production under Near-Infrared Light

Highly asymmetric zinc phthalocyanine derivative (Zn-tri-PcNc) with intense near-IR light (650–800 nm) absorption is utilized as a sensitizer to extend the spectral response region of graphitic carbon nitride (g-C3N4) from ∼450 nm to more than 800 nm. Ultraviolet–visible light (UV-vis) diffuse refle...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS catalysis 2014-01, Vol.4 (1), p.162-170
Hauptverfasser: Zhang, Xiaohu, Yu, Lijuan, Zhuang, Chuansheng, Peng, Tianyou, Li, Renjie, Li, Xingguo
Format: Artikel
Sprache:eng ; jpn
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Highly asymmetric zinc phthalocyanine derivative (Zn-tri-PcNc) with intense near-IR light (650–800 nm) absorption is utilized as a sensitizer to extend the spectral response region of graphitic carbon nitride (g-C3N4) from ∼450 nm to more than 800 nm. Ultraviolet–visible light (UV-vis) diffuse reflectance absorption spectra (DRS), photoluminescence (PL) spectra, time-resolved photoluminescence spectra (TRPS), and energy band structure analyses are adopted to investigate the photogenerated electron transfer process between Zn-tri-PcNc and g-C3N4 on both thermodynamics and dynamics aspects. After optimizing the photocatalytic condition and adding chenodeoxycholic acid (CDCA) as coadsorbent, Zn-tri-PcNc sensitized g-C3N4 photocatalyst shows a H2 production efficiency of 125.2 μmol h–1 under visible/near-IR-light (λ ≥ 500 nm) irradiation, corresponding to a turnover number (TON) of 5008 h–1 with an extremely high apparent quantum yield (AQY) of 1.85% at 700 nm monochromatic light irradiation. The present work should be the rarely fundamental investigation on the utilization of near-IR light of solar radiation for the photocatalytic H2 production from water splitting over a dye-sensitized semiconductor.
ISSN:2155-5435
2155-5435
DOI:10.1021/cs400863c