Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 °C using Sr( i Pr3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) concentration could be obtained by modulating the Sr...

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Veröffentlicht in:Chemistry of materials 2012-12, Vol.24 (24), p.4686-4692
Hauptverfasser: Han, Jeong Hwan, Lee, Woongkyu, Jeon, Woojin, Lee, Sang Woon, Hwang, Cheol Seong, Ko, Changhee, Gatineau, Julien
Format: Artikel
Sprache:eng
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Zusammenfassung:SrRuO3 (SRO) film was deposited by sequential executions of atomic layer deposition of SrO and chemical vapor deposition of RuO2 layers at a low growth temperature of 230 °C using Sr( i Pr3Cp)2, RuO4 precursors, and O2 gas. A wide range of Sr (Ru) concentration could be obtained by modulating the SrO/RuO2 subcycle ratio, and a high growth rate of ∼2.0 nm/supercycle was achieved with the stoichiometric SRO composition. The as-deposited SRO film was amorphous, and crystallized SRO film was obtained by post deposition annealing in N2 ambient at temperatures ranging from 600 to 700 °C. Crystallized SRO film was adopted as a seed layer for the in situ crystallization of ALD SrTiO3 (STO) film for application to capacitors for next generation dynamic random access memory. Consequently, a crystalline STO film was grown on crystallized SRO in the as-deposited state, and the dielectric constant of the STO film was largely improved compared to that of the amorphous STO, from 12 to 44.
ISSN:0897-4756
1520-5002
DOI:10.1021/cm302470k