CsPbBr3/CH3NH3PbCl3 Double Layer Enhances Efficiency and Lifetime of Perovskite Light-Emitting Diodes
At present, perovskite light-emitting diodes are mostly based on various forms of nanostructures exploiting their exciton confinement property. However, the few reports utilizing bulk or polycrystalline perovskites have been limited in application because of the difficulties of forming high-quality...
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Veröffentlicht in: | ACS energy letters 2020-07, Vol.5 (7), p.2191-2199 |
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creator | Kang, Dong-Ho Kim, Seul-Gi Kim, Yong Churl Han, In Taek Jang, Ho Jin Lee, Jun Yeob Park, Nam-Gyu |
description | At present, perovskite light-emitting diodes are mostly based on various forms of nanostructures exploiting their exciton confinement property. However, the few reports utilizing bulk or polycrystalline perovskites have been limited in application because of the difficulties of forming high-quality films, especially on the existing organic charge transport layers. When these charge transport organics are exchanged with thicker CH3NH3PbCl3, the emitting CsPbBr3 thick polycrystalline films containing CH3NH3Br are conformally deposited with improved luminescence quality without driving voltage increase. Enhanced crystallinity and prolonged photoluminescence are observed by exploiting interfacial defect passivation and the strain-induced effect in the heterostructures. This approach could lead to high-performance light-emitting diodes and may also be extended to other perovskite devices. |
doi_str_mv | 10.1021/acsenergylett.0c01036 |
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However, the few reports utilizing bulk or polycrystalline perovskites have been limited in application because of the difficulties of forming high-quality films, especially on the existing organic charge transport layers. When these charge transport organics are exchanged with thicker CH3NH3PbCl3, the emitting CsPbBr3 thick polycrystalline films containing CH3NH3Br are conformally deposited with improved luminescence quality without driving voltage increase. Enhanced crystallinity and prolonged photoluminescence are observed by exploiting interfacial defect passivation and the strain-induced effect in the heterostructures. This approach could lead to high-performance light-emitting diodes and may also be extended to other perovskite devices.</description><identifier>ISSN: 2380-8195</identifier><identifier>EISSN: 2380-8195</identifier><identifier>DOI: 10.1021/acsenergylett.0c01036</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>ACS energy letters, 2020-07, Vol.5 (7), p.2191-2199</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-7677-0605 ; 0000-0003-2368-6300</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsenergylett.0c01036$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsenergylett.0c01036$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,27053,27901,27902,56713,56763</link.rule.ids></links><search><creatorcontrib>Kang, Dong-Ho</creatorcontrib><creatorcontrib>Kim, Seul-Gi</creatorcontrib><creatorcontrib>Kim, Yong Churl</creatorcontrib><creatorcontrib>Han, In Taek</creatorcontrib><creatorcontrib>Jang, Ho Jin</creatorcontrib><creatorcontrib>Lee, Jun Yeob</creatorcontrib><creatorcontrib>Park, Nam-Gyu</creatorcontrib><title>CsPbBr3/CH3NH3PbCl3 Double Layer Enhances Efficiency and Lifetime of Perovskite Light-Emitting Diodes</title><title>ACS energy letters</title><addtitle>ACS Energy Lett</addtitle><description>At present, perovskite light-emitting diodes are mostly based on various forms of nanostructures exploiting their exciton confinement property. However, the few reports utilizing bulk or polycrystalline perovskites have been limited in application because of the difficulties of forming high-quality films, especially on the existing organic charge transport layers. When these charge transport organics are exchanged with thicker CH3NH3PbCl3, the emitting CsPbBr3 thick polycrystalline films containing CH3NH3Br are conformally deposited with improved luminescence quality without driving voltage increase. Enhanced crystallinity and prolonged photoluminescence are observed by exploiting interfacial defect passivation and the strain-induced effect in the heterostructures. 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However, the few reports utilizing bulk or polycrystalline perovskites have been limited in application because of the difficulties of forming high-quality films, especially on the existing organic charge transport layers. When these charge transport organics are exchanged with thicker CH3NH3PbCl3, the emitting CsPbBr3 thick polycrystalline films containing CH3NH3Br are conformally deposited with improved luminescence quality without driving voltage increase. Enhanced crystallinity and prolonged photoluminescence are observed by exploiting interfacial defect passivation and the strain-induced effect in the heterostructures. This approach could lead to high-performance light-emitting diodes and may also be extended to other perovskite devices.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsenergylett.0c01036</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-7677-0605</orcidid><orcidid>https://orcid.org/0000-0003-2368-6300</orcidid></addata></record> |
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title | CsPbBr3/CH3NH3PbCl3 Double Layer Enhances Efficiency and Lifetime of Perovskite Light-Emitting Diodes |
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