In Situ Growth of NiO@SnO2 Hierarchical Nanostructures for High Performance H2S Sensing

Heterostructured metal oxides with large specific surface area are crucial for constructing gas sensors with high performance. However, using slurry-coating and screen-printing methods to fabricate gas sensors cannot result in high uniformity and reproducibility of the sensors. Here, NiO nanowalls d...

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Veröffentlicht in:ACS applied materials & interfaces 2019-11, Vol.11 (47), p.44829-44836
Hauptverfasser: Liu, Lin, Wang, Yingyi, Dai, Yanbing, Li, Guanghui, Wang, Shuqi, Li, Tie, Zhang, Ting, Qin, Sujie
Format: Artikel
Sprache:eng
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Zusammenfassung:Heterostructured metal oxides with large specific surface area are crucial for constructing gas sensors with high performance. However, using slurry-coating and screen-printing methods to fabricate gas sensors cannot result in high uniformity and reproducibility of the sensors. Here, NiO nanowalls decorated by SnO2 nanoneedles (NiO@SnO2) were in situ grown on ceramic microchips via a chemical bath deposition method to detect H2S instead of print-coating and slurry-coating methods. The morphologies and compositions of the NiO@SnO2 hierarchical nanostructures (HNSs) were well tuned by varying the growth time of the NiO@SnO2 HNSs to optimize the sensing performance. The response of the NiO@SnO2 HNSs (2 h) to 1 ppm of H2S was over 23-fold higher than that of the pure NiO nanowalls and 17-fold higher than that of the pure SnO2 nanosheets. This dramatic enhancement is attributed to the large surface area of the NiO@SnO2 HNSs and the p–n heterojunction at the heterointerface of SnO2 and NiO. The variation in the depletion layers (W SnO2 and W NiO) at the heterointerface of SnO2 and NiO greatly depends on the properties of the target gases (e.g., electron-withdrawing property (NO2) or electron-donating property (H2S)).
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.9b13001