Wide-Range Epitaxial Strain Control of Electrical and Magnetic Properties in High-Quality SrRuO3 Films

Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic studies. This study demonstrates wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates having a lattice mismatch of −1.6 to 2.3% with reference to bulk SrRuO3. The Poisson ratio, which represents the two orthogonal distortions owing to the substrate clamping effect, is estimated to be 0.33. The Curie temperature (T C) and residual resistivity ratios of the series of films are higher than or comparable to the highest reported values for SrRuO3 on each substrate, confirming the high crystalline quality of the films. A T C of 169 K is achieved in a tensile-strained SrRuO3 film on the DyScO3(110) substrate, which is the highest value ever reported for SrRuO3. The T C (146–169 K), magnetic anisotropy (perpendicular or in-plane magnetic easy axis), and metallic conduction (residual resistivity at 2 K of 2.10–373 μΩ·cm) of SrRuO3 are widely controlled by epitaxial strain. These results provide guidelines to design SrRuO3-based heterostructures for device applications.