Optimizing Performance and Operational Stability of CsPbI3 Quantum-Dot-Based Light-Emitting Diodes by Interface Engineering

Perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation display technology and lighting applications owing to their high current efficiency, low operating voltage, narrow spectral emission, and tunable emission color. Keys to achieving efficient PeLEDs are, besides an emitter layer with high optical quality, a negligible charge injection barrier between charge injecting layers (CILs) and an optimized thickness of these CILs for a controlled flow of charge carriers through the device. In this study, we systematically optimized hole transport layers and electron transport layers (ETLs) in PeLEDs employing CsPbI3 quantum dots as an emitter layer. We also investigated two bilayer cathodes (Liq/Ag and LiF/Al) with the various ETLs employed in our study and observed that 2,4,6-tris­[3-(diphenylphosphinyl)­phenyl]-1,3,5-triazine (PO-T2T) as an ETL improves the band alignment, leading to better electron injection. The improved electron/hole current balance results in ∼63% higher external quantum efficiency (EQE) in PO-T2T-based devices compared to PeLEDs employing other ETLs. In addition, we tracked the operational stability of the different devices observing a correlation with the EQE, where samples with higher EQE (PO-T2T-based devices) also present the highest stable operation at elevated current densities.