Epitaxial Formation Mechanism of Multilayer TiO2 Films with Ordered Accessible Vertical Nanopores by Evaporation-Driven Assembly
Surfactant-templated mesoporous titania (TiO2) films have excellent physical and electronic properties, but some potential applications require films thicker than the 100–200 nm typically prepared by sol–gel coating. Here, the mechanism of forming micrometer thick TiO2 films with vertically oriented...
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Veröffentlicht in: | Journal of physical chemistry. C 2020-01, Vol.124 (3), p.1958-1972 |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Surfactant-templated mesoporous titania (TiO2) films have excellent physical and electronic properties, but some potential applications require films thicker than the 100–200 nm typically prepared by sol–gel coating. Here, the mechanism of forming micrometer thick TiO2 films with vertically oriented nanopore channels by a layer-by-layer deposition technique (up to eight 125 nm thick layers) is investigated. In situ grazing incidence small-angle X-ray scattering (GISAXS) performed on successive layers of Pluronic F127-templated films reveals if and how epitaxially oriented layers form during aging at 4 °C. At 78% relative humidity (RH), films cast onto substrates modified with cross-linked F127 maintain a (011)-oriented Im3̅m cubic mesophase order, whereas micelles on unmodified glass lose their preferred orientation, leading to the observation of an arc in GISAXS attributed to an anisotropic micelle structure. A similar arc from randomly oriented domains is found at low relative humidity (38%) regardless of substrate modification. Avrami model analysis shows that each oriented epitaxial layer followed formation kinetics with the same order (n = 1.8 ± 0.3) and half-life (10–20 min). Cross-sectional electron microscopy and impedance spectroscopy of the films after calcination at 400 °C show the formation of continuous, accessible vertical pore channels by micelle fusion for mesophases properly oriented by initial substrate modification. |
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ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/acs.jpcc.9b09376 |