Persistent Photogenerated State Attained by Femtosecond Laser Irradiation of Thin T d‑MoTe2

Laser excitation has emerged as a means to expose hidden states of matter and promote phase transitions on demand. Such laser-induced transformations are often rendered possible owing to the delivery of spatially and/or temporally manipulated light, carrying energy quanta well above the thermal back...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physical chemistry. C 2022-08, Vol.126 (32), p.13840-13846
Hauptverfasser: Cheng, Meixin, Zhong, Shazhou, Rivas, Nicolas, Dekker, Tina, Petruk, Ariel Alcides, Gicala, Patrick, Pichugin, Kostyantyn, Chen, Fangchu, Luo, Xuan, Sun, Yuping, Tsen, Adam W., Sciaini, Germán
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Laser excitation has emerged as a means to expose hidden states of matter and promote phase transitions on demand. Such laser-induced transformations are often rendered possible owing to the delivery of spatially and/or temporally manipulated light, carrying energy quanta well above the thermal background. Here, we report time-resolved broadband femtosecond (fs) transient absorption measurements on thin flakes of the Weyl semimetal candidate T d-MoTe2 subjected to various levels and schemes of fs-photoexcitation. Our results reveal that impulsive fs-laser irradiation alters the interlayer behavior of the low temperature T d phase as evidenced by the persistent disappearance of its characteristic coherent 1A1 ≈ 13 cm–1 shear phonon mode. We found that this structural transformation is likely related to lattice strain formation, withstands thermal cycling, and can be reverted to the 1T′ phase by fs-laser treatment at room temperature. Since interlayer shear strain was encountered to lead to a topologically distinct phase in an analogous compound, our work opens the door to the reversible optical control of electronic properties in this class of materials.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.2c03987