Highly Stable BaZrS3 Chalcogenide Perovskites for Photoelectrochemical Water Oxidation

Chalcogenide perovskites have emerged as potential semiconductor materials for optoelectronic devices due to their superior visible light absorption and high thermal and chemical stability. Here, we report BaZrS3 chalcogenide perovskites-based photoelectrode for photoelectrochemical water splitting...

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Veröffentlicht in:Energy & fuels 2024-11, Vol.38 (22), p.22527-22535
Hauptverfasser: Das, Aparajita, Halpati, Jigar Shaileshkumar, Raj, Vidya, Chandiran, Aravind Kumar
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Sprache:eng
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Zusammenfassung:Chalcogenide perovskites have emerged as potential semiconductor materials for optoelectronic devices due to their superior visible light absorption and high thermal and chemical stability. Here, we report BaZrS3 chalcogenide perovskites-based photoelectrode for photoelectrochemical water splitting (PEC). Experimental findings reveal that BaZrS3 exhibits excellent stability in harsh pH conditions (pH 3–13) and shows panchromatic absorption with a band gap of 1.77 eV. Temperature-dependent impedance and Raman spectroscopy unveil the presence of polarons and suggest the possibility of polaron-mediated conduction in this material. Under 1 Sun illumination, the PEC device attains a maximum photocurrent density of 0.36 mA/cm2 at 0.323 V vs Ag/AgCl at pH 12 (equivalent to 0 V vs RHE), maintaining stability for 30 min. Notably, the photoanode exhibits remarkable stability before and after the photoelectrochemical reaction. BaZrS3 photoanode displays high surface charge separation efficiency, promoting the surface oxidation reaction.
ISSN:0887-0624
1520-5029
DOI:10.1021/acs.energyfuels.4c03175