Role of Na+ Interstitials and Dopants in Enhancing the Na+ Conductivity of the Cubic Na3PS4 Superionic Conductor

In this work, we performed a first-principles investigation of the phase stability, dopant formation energy and Na+ conductivity of pristine and doped cubic Na3PS4 (c-Na3PS4). We show that pristine c-Na3PS4 is an extremely poor Na ionic conductor, and the introduction of Na+ excess is the key to ach...

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Veröffentlicht in:Chemistry of materials 2015-12, Vol.27 (24), p.8318-8325
Hauptverfasser: Zhu, Zhuoying, Chu, Iek-Heng, Deng, Zhi, Ong, Shyue Ping
Format: Artikel
Sprache:eng
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Zusammenfassung:In this work, we performed a first-principles investigation of the phase stability, dopant formation energy and Na+ conductivity of pristine and doped cubic Na3PS4 (c-Na3PS4). We show that pristine c-Na3PS4 is an extremely poor Na ionic conductor, and the introduction of Na+ excess is the key to achieving reasonable Na+ conductivities. We studied the effect of aliovalent doping of M4+ for P5+ in c-Na3PS4, yielding Na3+x M x P1–x S4 (M = Si, Ge, and Sn with x = 0.0625; M = Si with x = 0.125). The formation energies in all the doped structures with dopant concentration of x = 0.0625 are found to be relatively low. Using ab initio molecular dynamics simulations, we predict that 6.25% Si-doped c-Na3PS4 has a Na+ conductivity of 1.66 mS/cm, in excellent agreement with previous experimental results. Remarkably, we find that Sn4+ doping at the same concentration yields a much higher predicted Na+ conductivity of 10.7 mS/cm, though with a higher dopant formation energy. A higher Si4+ doping concentration of x = 0.125 also yields a significant increase in Na+ conductivity with an even higher dopant formation energy. Finally, topological and van Hove correlation function analyses suggest that the channel volume and correlation in Na+ motions may play important roles in enhancing Na+ conductivity in this structure.
ISSN:0897-4756
1520-5002
DOI:10.1021/acs.chemmater.5b03656