Epitaxial Growth of β‑Bi2O3 Thin Films and Particles with Mist Chemical Vapor Deposition
Metastable β-Bi2O3 (201) epitaxial thin films and particles were synthesized on α-Al2O3 (0001) single crystal substrates with mist chemical vapor deposition. With increasing synthesis temperature, the morphology of β-Bi2O3 was transformed from flat thin film with root-mean-square roughness of about...
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Veröffentlicht in: | Crystal growth & design 2019-12, Vol.19 (12), p.7170-7174 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Metastable β-Bi2O3 (201) epitaxial thin films and particles were synthesized on α-Al2O3 (0001) single crystal substrates with mist chemical vapor deposition. With increasing synthesis temperature, the morphology of β-Bi2O3 was transformed from flat thin film with root-mean-square roughness of about 1 nm to nano- or micro-particles, in which the thin films and particles showed good crystallinity despite the large lattice mismatch between β-Bi2O3 and α-Al2O3. The key factor to stabilize the metastable β-phase was crystallization from the amorphous phase by solid phase epitaxy. Short postannealing significantly improved the crystallinity and surface flatness. |
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ISSN: | 1528-7483 1528-7505 |
DOI: | 10.1021/acs.cgd.9b01033 |