High-Temperature Plateau–Rayleigh Growth of Beaded SiC/SiO2 Nanochain Heterostructures

High-Temperature Plateau–Rayleigh Growth of Beaded SiC/SiO2 Nanochain Heterostructures

The Plateau–Rayleigh (P-R) crystal growth was recently proposed and dramatically extended the one-dimensional nanomaterials synthesis due to its tunable morphological features. Previously reported P-R growth is mainly focused on the relative low-temperature reactions (

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Veröffentlicht in:Crystal growth & design 2018-05, Vol.18 (5), p.2941-2947
Hauptverfasser: Chu, Yanhui, Jing, Siyi, Yu, Xiang, Zhao, Yunlong
Format: Artikel
Sprache:eng
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Zusammenfassung:The Plateau–Rayleigh (P-R) crystal growth was recently proposed and dramatically extended the one-dimensional nanomaterials synthesis due to its tunable morphological features. Previously reported P-R growth is mainly focused on the relative low-temperature reactions (
ISSN:1528-7483
1528-7505
DOI:10.1021/acs.cgd.8b00057