Co-assembled T4-Cu4In16S35 and Cubic Cu12S8 Clusters: A Crystal Precursor for Near-Infrared Absorption Material

Recently, discrete large Tn clusters have become particularly attractive because they can be used as starting materials not only for constructing porous chalcogenides but also for solution processing of semiconductor film materials with electronic and optical properties. However, the discrete large clusters of main-group metal chalcogenides are difficult to stabilize because of their high negative charge. We report herein a new crystal compound co-assembled by discrete T4 [Cu4In16S35H4]14–and cubic [Cu12S8]4– clusters. It is uncommon that the negatively charged CuS cluster acts as a template to sustain a hexagonal cavity formed by negatively charged T4 clusters. Its degeneration product shows an excellent near-infrared absorption property and photocurrent responsive properties.