Incremental event-driven simulation of digital FET circuits

This paper presents a new and efficient approach to transistor-level simulation of very large, digital, FET circuits. By the simple expedient of letting only one device current change at any given time, simulation can be performed in an event-driven manner. Circuit equations are incrementally re-sol...

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Hauptverfasser:	Visweswariah, Chandramouli, Wehbeh, Jalal A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Circuit simulation Computational modeling Computing methodologies > Modeling and simulation > Simulation types and techniques > Discrete-event simulation Discrete event simulation Equations FET circuits Hardware > Hardware validation > Functional verification > Simulation and emulation Hardware > Integrated circuits Hardware > Very large scale integration design Piecewise linear approximation Piecewise linear techniques Switches Virtual prototyping Voltage
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Beschreibung
Zusammenfassung:	This paper presents a new and efficient approach to transistor-level simulation of very large, digital, FET circuits. By the simple expedient of letting only one device current change at any given time, simulation can be performed in an event-driven manner. Circuit equations are incrementally re-solved after each local perturbation. A prototype implementation of the new formulation and experimental results are presented.
ISSN:	0738-100X
DOI:	10.1145/157485.165111