NASFLOW, a simulation tool for silicon technology development

A simulation system is described for linking two-dimensional simulators for process and device to a parameter extraction program, for the purpose of generating artificial parameters for the circuit analysis program, NASPICE. A key feature of the system is that it operates under the control of a shel...

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Bibliographische Detailangaben
Hauptverfasser: Forsythe, D. David, Agarwal, Atul P., Yeh, Chune-Sin, Aronowitz, Sheldon, Gadepally, Bhaskar
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:A simulation system is described for linking two-dimensional simulators for process and device to a parameter extraction program, for the purpose of generating artificial parameters for the circuit analysis program, NASPICE. A key feature of the system is that it operates under the control of a shell program which offers a simple and easy to use interface to the user. Results of an initial development using the program sequence SUPRA = > PISCES = > CADPET = > NASPICE are described. Good correlation was obtained between system generated drain characteristics and silicon for both N and P-channel MOS transistors, and similarly for CMOS DC transfer characteristics.
DOI:10.1145/123186.123296