NASFLOW, a simulation tool for silicon technology development
A simulation system is described for linking two-dimensional simulators for process and device to a parameter extraction program, for the purpose of generating artificial parameters for the circuit analysis program, NASPICE. A key feature of the system is that it operates under the control of a shel...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | A simulation system is described for linking two-dimensional simulators for process and device to a parameter extraction program, for the purpose of generating artificial parameters for the circuit analysis program, NASPICE. A key feature of the system is that it operates under the control of a shell program which offers a simple and easy to use interface to the user. Results of an initial development using the program sequence
SUPRA = > PISCES = > CADPET = > NASPICE are described. Good correlation was obtained between system generated drain characteristics and silicon for both N and P-channel MOS transistors, and similarly for CMOS DC transfer characteristics. |
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DOI: | 10.1145/123186.123296 |