Flash Memories
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and...
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| Hauptverfasser: | , , , |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1999
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| Online-Zugang: | BTU01 URL des Erstveröffentlichers |
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| 245 | 1 | 0 | |a Flash Memories |c by Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni |
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| 520 | |a A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5] | ||
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Circuits and Systems | |
| 650 | 4 | |a Electrical Engineering | |
| 650 | 4 | |a Processor Architectures | |
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Datensatz im Suchindex
| _version_ | 1804178876302098432 |
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| any_adam_object | |
| author | Cappelletti, Paulo Golla, Carla Olivo, Piero Zanoni, Enrico |
| author_facet | Cappelletti, Paulo Golla, Carla Olivo, Piero Zanoni, Enrico |
| author_role | aut aut aut aut |
| author_sort | Cappelletti, Paulo |
| author_variant | p c pc c g cg p o po e z ez |
| building | Verbundindex |
| bvnumber | BV045185903 |
| collection | ZDB-2-ENG |
| ctrlnum | (ZDB-2-ENG)978-1-4615-5015-0 (OCoLC)1184380233 (DE-599)BVBBV045185903 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4615-5015-0 |
| format | Electronic eBook |
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In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. 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| id | DE-604.BV045185903 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:56Z |
| institution | BVB |
| isbn | 9781461550150 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030575081 |
| oclc_num | 1184380233 |
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| physical | 1 Online-Ressource (XI, 540 p) |
| psigel | ZDB-2-ENG ZDB-2-ENG_Archiv ZDB-2-ENG ZDB-2-ENG_Archiv |
| publishDate | 1999 |
| publishDateSearch | 1999 |
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| publisher | Springer US |
| record_format | marc |
| spelling | Cappelletti, Paulo Verfasser aut Flash Memories by Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni Boston, MA Springer US 1999 1 Online-Ressource (XI, 540 p) txt rdacontent c rdamedia cr rdacarrier A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5] Engineering Circuits and Systems Electrical Engineering Processor Architectures Microprocessors Electrical engineering Electronic circuits Flash-Speicher (DE-588)4518714-9 gnd rswk-swf Flash-Speicher (DE-588)4518714-9 s 1\p DE-604 Golla, Carla aut Olivo, Piero aut Zanoni, Enrico aut Erscheint auch als Druck-Ausgabe 9780792384878 https://doi.org/10.1007/978-1-4615-5015-0 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Cappelletti, Paulo Golla, Carla Olivo, Piero Zanoni, Enrico Flash Memories Engineering Circuits and Systems Electrical Engineering Processor Architectures Microprocessors Electrical engineering Electronic circuits Flash-Speicher (DE-588)4518714-9 gnd |
| subject_GND | (DE-588)4518714-9 |
| title | Flash Memories |
| title_auth | Flash Memories |
| title_exact_search | Flash Memories |
| title_full | Flash Memories by Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni |
| title_fullStr | Flash Memories by Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni |
| title_full_unstemmed | Flash Memories by Paulo Cappelletti, Carla Golla, Piero Olivo, Enrico Zanoni |
| title_short | Flash Memories |
| title_sort | flash memories |
| topic | Engineering Circuits and Systems Electrical Engineering Processor Architectures Microprocessors Electrical engineering Electronic circuits Flash-Speicher (DE-588)4518714-9 gnd |
| topic_facet | Engineering Circuits and Systems Electrical Engineering Processor Architectures Microprocessors Electrical engineering Electronic circuits Flash-Speicher |
| url | https://doi.org/10.1007/978-1-4615-5015-0 |
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