Low temperature epitaxial growth of semiconductors
Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts...
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| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Singapore
World Scientific Pub. Co.
c1991
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| Online-Zugang: | FHN01 URL des Erstveroeffentlichers |
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| 245 | 1 | 0 | |a Low temperature epitaxial growth of semiconductors |c edited by Takashi Hariu |
| 264 | 1 | |a Singapore |b World Scientific Pub. Co. |c c1991 | |
| 300 | |a vi, 343 p. |b ill | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 520 | |a Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole | ||
| 650 | 4 | |a Compound semiconductors | |
| 650 | 4 | |a Epitaxy | |
| 650 | 4 | |a Crystal growth | |
| 650 | 4 | |a Low temperatures | |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
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| 689 | 1 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Hariu, Takashi |e Sonstige |4 oth | |
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Datensatz im Suchindex
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| dewey-sort | 3621.381 252 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV044638405 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T07:57:53Z |
| institution | BVB |
| isbn | 9789814343022 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030036379 |
| oclc_num | 1012727112 |
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| physical | vi, 343 p. ill |
| psigel | ZDB-124-WOP ZDB-124-WOP FHN_PDA_WOP |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | World Scientific Pub. Co. |
| record_format | marc |
| spelling | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu Singapore World Scientific Pub. Co. c1991 vi, 343 p. ill txt rdacontent c rdamedia cr rdacarrier Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie (DE-588)4152545-0 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Epitaxie (DE-588)4152545-0 s 1\p DE-604 Halbleiterbauelement (DE-588)4113826-0 s 2\p DE-604 Hariu, Takashi Sonstige oth Erscheint auch als Druck-Ausgabe 9789971508395 Erscheint auch als Druck-Ausgabe 9971508397 http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc Verlag URL des Erstveroeffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Low temperature epitaxial growth of semiconductors Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie (DE-588)4152545-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4152545-0 (DE-588)4113826-0 (DE-588)4022993-2 |
| title | Low temperature epitaxial growth of semiconductors |
| title_auth | Low temperature epitaxial growth of semiconductors |
| title_exact_search | Low temperature epitaxial growth of semiconductors |
| title_full | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu |
| title_fullStr | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu |
| title_full_unstemmed | Low temperature epitaxial growth of semiconductors edited by Takashi Hariu |
| title_short | Low temperature epitaxial growth of semiconductors |
| title_sort | low temperature epitaxial growth of semiconductors |
| topic | Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie (DE-588)4152545-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Compound semiconductors Epitaxy Crystal growth Low temperatures Epitaxie Halbleiterbauelement Halbleiter |
| url | http://www.worldscientific.com/worldscibooks/10.1142/0802#t=toc |
| work_keys_str_mv | AT hariutakashi lowtemperatureepitaxialgrowthofsemiconductors |