Growth and characterization of InGaAs based nanowire-heterostructures
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
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Garching
Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München
2017
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| Ausgabe: | 1. Auflage |
| Schriftenreihe: | Selected topics of semiconductor physics and technology
Vol. 201 |
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| 020 | |a 9783946379010 |9 978-3-946379-01-0 | ||
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| 100 | 1 | |a Treu, Julian Pascal |e Verfasser |0 (DE-588)1130792471 |4 aut | |
| 245 | 1 | 0 | |a Growth and characterization of InGaAs based nanowire-heterostructures |c Julian Pascal Treu |
| 250 | |a 1. Auflage | ||
| 264 | 1 | |a Garching |b Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München |c 2017 | |
| 300 | |a vi, 219 Seiten |b Illustrationen, Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Selected topics of semiconductor physics and technology |v Vol. 201 | |
| 502 | |b Dissertation |c Technische Universität München |d 2017 | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 830 | 0 | |a Selected topics of semiconductor physics and technology |v Vol. 201 |w (DE-604)BV011499438 |9 201 | |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-029691062 | |
Datensatz im Suchindex
| DE-BY-TUM_call_number | 0001 DM 35147 |
|---|---|
| DE-BY-TUM_katkey | 2262876 |
| DE-BY-TUM_location | Mag |
| DE-BY-TUM_media_number | TEMP3280981 |
| _version_ | 1820897450693492736 |
| adam_text | CONTENTS
ABSTRACT I
ZUSAMMENFASSUNG III
INTRODUCTION 1
1 MOLECULAR BEAM EPITAXY 7
1.1 THE MOLECULAR BEAM EPITAXY S Y S TE M
...............................................................
9
1.2 WAFER
PREPARATION...............................................................................................
10
1.2.1 SELF-ASSEMBLED G RO W TH
.........................................................................
11
1.2.2 SELECTIVE AREA
EPITAXY............................................................................
13
1.3 NANOWIRE GROWTH O P TIM IZATIO N
.........................................................................
17
1.3.1 NANOWIRES WITH STRONGLY REDUCED DIAMETER
......................................
19
1.3.2 HIGH-TEMPERATURE GROWTH PARAMETER SP A C E
.........................................
23
1.3.3 D O P IN G
..................................................................................................
27
1.4 S U M M A RY
...........................................................................................................
35
2 INGAAS NANOWIRE GROWTH 37
2.1 GROWTH OF INGAAS NANOW
IRES...........................................................................
39
2.2 SURFACE FERMI LEVEL PINNING IN INGAAS N AN O W IRES
.........................................
48
2.3 S U M M A RY
..............................................................................
60
3 INGAAS BASED HETEROSTRUCTURES 63
3.1 INAS-INASP CORE-SHELL NANOW
IRES......................................................................
64
3.1.1 TUNING THE SHELL TH IC K N E S S
..................................................................
65
3.1.2 VARYING PHOSPHOROUS CONTENT
...............................................................
71
3.1.3 SIMULATION OF STRAINED CORE-SHELL N AN O W IRES
......................................
76
3.1.4 SINGLE NANOWIRE SP ECTRO SCO P Y
............................
79
3.2 RADIAL INGAAS-INALAS H
ETEROSTRUCTURES.........................................................
82
3.2.1 CORE-SHELL GROWTH AND MORPHOLOGY
.
............................................
...
. 83
3.2.2 OPTICAL RESPONSE . . .
.
..................
90
3.3 S U M M A RY
.........................................
...
.
.
..................
............................
...
94
4 SOLAR CELL 95
4.1 BASIC PRINCIPLES OF NANOWIRE SOLAR CELLS
.........................................................
96
4.1.1
EFFICIENCY................................................................................................
96
4.1.2 A B SO RP TIO N
...............................................................................................
100
4.2 AXIAL NANOWIRE SOLAR C E
LLS......................................................................................109
4.3 CONCEPT AND FABRICATION OF RADIAL SOLAR C E L L S
...................................................... 113
4.4 EXCEEDING THE SHOCKLEY-QUEISSER LIM IT
...............................................................
127
4.5 S U M M A RY
...............................................................................................................
135
CONCLUSION AND OUTLOOK 137
APPENDIX 145
A.L SUPPLEMENTARY INFORM ATION
..................................................................................
145
A. 1.1 LIST OF SA M P LE S
..........................................................................................145
A. 1.2 DOUBLE BARRIER S TR U C TU R E
..........................................................................148
A .1.3 DIELECTROPHORESIS
......................................................................................
152
A. 1.4 P L - S E TU P
...................................................................................................
154
A.2 SUBSTRATE P RE P A RA TIO N
............................................................................................
159
A.2.1 HSQ
..........................................................................................................159
A.2.2 G A S B
.........................................................................................................
160
A.2.3 ELECTRON BEAM LITH O G RAP H Y
.......................................................................162
A.2.4 THERMAL IMPRINT LITH O G RAP H Y
...................................................................
163
A.2.5 UV IMPRINT
LITHOGRAPHY.............................................................................163
A.3 FABRICATION R E C I P E S
...............................................................................................
167
A. 3.1 CONTACTS
...................................................................................................
167
A.3.2 WET E TC H IN G
................................................................................................
169
A.3.3 REACTIVE ION E TC H I N G
................................................................................
170
A.3.4 P C B
.............................................................................................................171
ACRONYMS 175
BIBLIOGRAPHY 179
LIST OF FIGURES 211
LIST OF PUBLICATIONS 214
ACKNOWLEDGMENT
219
|
| any_adam_object | 1 |
| author | Treu, Julian Pascal |
| author_GND | (DE-588)1130792471 |
| author_facet | Treu, Julian Pascal |
| author_role | aut |
| author_sort | Treu, Julian Pascal |
| author_variant | j p t jp jpt |
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| bvnumber | BV044286849 |
| classification_tum | PHY 685d ELT 300d TEC 030d |
| ctrlnum | (OCoLC)992473937 (DE-599)BVBBV044286849 |
| discipline | Physik Technik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. Auflage |
| format | Thesis Book |
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| id | DE-604.BV044286849 |
| illustrated | Illustrated |
| indexdate | 2024-12-24T05:56:14Z |
| institution | BVB |
| isbn | 9783946379010 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029691062 |
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| owner_facet | DE-12 DE-91 DE-BY-TUM DE-83 |
| physical | vi, 219 Seiten Illustrationen, Diagramme |
| publishDate | 2017 |
| publishDateSearch | 2017 |
| publishDateSort | 2017 |
| publisher | Verein zur Förderung des Walter Schottky Instituts der Technischen Universität München |
| record_format | marc |
| series | Selected topics of semiconductor physics and technology |
| series2 | Selected topics of semiconductor physics and technology |
| spellingShingle | Treu, Julian Pascal Growth and characterization of InGaAs based nanowire-heterostructures Selected topics of semiconductor physics and technology |
| subject_GND | (DE-588)4113937-9 |
| title | Growth and characterization of InGaAs based nanowire-heterostructures |
| title_auth | Growth and characterization of InGaAs based nanowire-heterostructures |
| title_exact_search | Growth and characterization of InGaAs based nanowire-heterostructures |
| title_full | Growth and characterization of InGaAs based nanowire-heterostructures Julian Pascal Treu |
| title_fullStr | Growth and characterization of InGaAs based nanowire-heterostructures Julian Pascal Treu |
| title_full_unstemmed | Growth and characterization of InGaAs based nanowire-heterostructures Julian Pascal Treu |
| title_short | Growth and characterization of InGaAs based nanowire-heterostructures |
| title_sort | growth and characterization of ingaas based nanowire heterostructures |
| topic_facet | Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029691062&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT treujulianpascal growthandcharacterizationofingaasbasednanowireheterostructures |