Three-Dimensional Simulation of Semiconductor Devices

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1. Verfasser: Kircher, Roland (VerfasserIn)
Format: Elektronisch E-Book
Sprache:German
Veröffentlicht: Basel Birkhäuser Basel 1991
Schriftenreihe:Progress in Numerical Simulation for Microelectronics 1
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500 |a The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complexity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen­ sion had to be utilized to realize the storage capacitor. The resulting leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device research and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities concerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconductor equations, discusses the physical models used in device simulation, describes the discretization and some numerical methods for solving the differential equations. The application of the three­dimensional simulation to VLSI device engineering is illustrated by a few specific examples 
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Datensatz im Suchindex

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isbn 9783034877312
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language German
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record_format marc
series Progress in Numerical Simulation for Microelectronics
series2 Progress in Numerical Simulation for Microelectronics
spellingShingle Kircher, Roland
Three-Dimensional Simulation of Semiconductor Devices
Progress in Numerical Simulation for Microelectronics
Science (General)
Science, general
Naturwissenschaft
Halbleiterschaltung (DE-588)4158811-3 gnd
Halbleiterbauelement (DE-588)4113826-0 gnd
Simulation (DE-588)4055072-2 gnd
subject_GND (DE-588)4158811-3
(DE-588)4113826-0
(DE-588)4055072-2
title Three-Dimensional Simulation of Semiconductor Devices
title_auth Three-Dimensional Simulation of Semiconductor Devices
title_exact_search Three-Dimensional Simulation of Semiconductor Devices
title_full Three-Dimensional Simulation of Semiconductor Devices von Roland Kircher, Wolfgang Bergner
title_fullStr Three-Dimensional Simulation of Semiconductor Devices von Roland Kircher, Wolfgang Bergner
title_full_unstemmed Three-Dimensional Simulation of Semiconductor Devices von Roland Kircher, Wolfgang Bergner
title_short Three-Dimensional Simulation of Semiconductor Devices
title_sort three dimensional simulation of semiconductor devices
topic Science (General)
Science, general
Naturwissenschaft
Halbleiterschaltung (DE-588)4158811-3 gnd
Halbleiterbauelement (DE-588)4113826-0 gnd
Simulation (DE-588)4055072-2 gnd
topic_facet Science (General)
Science, general
Naturwissenschaft
Halbleiterschaltung
Halbleiterbauelement
Simulation
url https://doi.org/10.1007/978-3-0348-7731-2
volume_link (DE-604)BV004586845
work_keys_str_mv AT kircherroland threedimensionalsimulationofsemiconductordevices
AT bergnerwolfgang threedimensionalsimulationofsemiconductordevices