Plasma enhanced growth of GaN single crystalline layers from vapour phase
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| Sprache: | English |
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2014
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| 100 | 1 | |a Zwierz, Radosław Piotr |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Plasma enhanced growth of GaN single crystalline layers from vapour phase |c Radosław Piotr Zwierz |
| 264 | 1 | |c 2014 | |
| 300 | |a X, 115 S., S. XI - LVI |b graph. Darst., Ill. | ||
| 336 | |b txt |2 rdacontent | ||
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| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Cottbus-Senftenberg, Techn. Univ., Diss., 2014 | ||
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| 650 | 0 | 7 | |a Plasma |0 (DE-588)4046249-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gasphase |0 (DE-588)4156038-3 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
| _version_ | 1804152426998005760 |
|---|---|
| adam_text | CONTENTS
1. INTRODUCTION 1
1.1. PROPERTIES OF GAN 2
2. CURRENT STATUS OF GAN GROWTH TECHNOLOGY 5
2.1. REVIEW OF RELEVANT BULK GROWTH TECHNIQUES 7
2.1.1. SOLUTION GROWTH 7
2.1.2. VAPOUR PHASE GROWTH 11
2.2. GAN VAPOUR GROWTH IN IKZ 15
2.2.1. PHYSICAL VAPOUR TRANSPORT OF GA 15
2.2.2. CHEMICAL VAPOUR TRANSPORT OF GA 18
2.3. SEEDS AND GROWTH MODES 19
2.3.1. SEEDS 20
2.3.2. GROWTH MODES 21
3. NITROGEN PLASMA 23
3.1. POWER ABSORPTION IN THE MICROWAVE FIELD 23
3.2. PLASMA CLASSIFICATION 26
3.3. EXCITED STATES OF NITROGEN 29
3.4. OPTICAL EMISSION SPECTROSCOPY 30
3.4.1. MOLECULAR SPECTRA 32
4. PLASMA ENHANCED METHODS FOR GAN GROWTH 39
4.1. PLASMA ASSISTED VAPOUR EPITAXY 39
4.2. PLASMA ASSISTED SOLUTION GROWTH 43
4.3. PHYSICAL VAPOUR TRANSPORT WITH BARRIER DISCHARGE IN IKZ 45
5. EXPERIMENTAL - MW PLASMA ENHANCED GROWTH 49
5.1. OUTLINE OF THE SYSTEM 49
5.1.1. GROWTH SETUP 51
5.1.2. MW PLASMA SOURCE 58
5.2. STABILITY OF MW PLASMA 68
5.3. ADVANTAGES OF NITROGEN PLASMA OVER AMMONIA 74
5.4. STUDY ON GA VAPOUR 76
5.4.1. GA SUPPLY AND SUPER-SATURATION -. . . 77
5.4.2. PLASMA EXCITATION OF GA VAPOUR 84
5.5. DEPOSITION EXPERIMENTS AS OPTIMISATION TOOL 92
5.6. GROWTH OF GAN SINGLE CRYSTALLINE LAYERS 100
5.6.1. EXPERIMENTAL PROCEDURE 100
5.6.2. CHARACTERISATION OF GAN LAYERS 102
HTTP://D-NB.INFO/1056919159
CONTENTS
6. SUMMARY AND OUTLOOK 113
APPENDICES XI
APPENDIX A. MATERIAL PROPERTIES XIII
A.L. CERAMICS XIII
A.2. REFRACTORY METALS XIV
APPENDIX B. CALCULATIONS XV
B.L. THERMAL EXPANSION COEFFICIENT OF MO XV
B.2. CHANGE OF THE CAVITY DIAMETER XV
B.3. RESONANCE FREQUENCY SHIFT - ESTIMATIONS XVI
APPENDIX C. EXPERIMENTS XVII
APPENDIX D. SECOND POSITIVE SYSTEM OF N
2
XIX
BIBLIOGRAPHY XXI
LIST OF FIGURES XXXIX
LIST OF TABLES XLV
LIST OF SYMBOLS XLVII
LIST OF ABBREVIATIONS LI
ACKNOWLEDGEMENTS IV
|
| any_adam_object | 1 |
| author | Zwierz, Radosław Piotr |
| author_facet | Zwierz, Radosław Piotr |
| author_role | aut |
| author_sort | Zwierz, Radosław Piotr |
| author_variant | r p z rp rpz |
| building | Verbundindex |
| bvnumber | BV042013465 |
| classification_rvk | UQ 2160 |
| collection | ebook |
| ctrlnum | (OCoLC)889533478 (DE-599)BVBBV042013465 |
| discipline | Physik |
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| indexdate | 2024-07-10T01:10:32Z |
| institution | BVB |
| language | English |
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| physical | X, 115 S., S. XI - LVI graph. Darst., Ill. |
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| publishDate | 2014 |
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| spelling | Zwierz, Radosław Piotr Verfasser aut Plasma enhanced growth of GaN single crystalline layers from vapour phase Radosław Piotr Zwierz 2014 X, 115 S., S. XI - LVI graph. Darst., Ill. txt rdacontent n rdamedia nc rdacarrier Cottbus-Senftenberg, Techn. Univ., Diss., 2014 Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Plasma (DE-588)4046249-3 gnd rswk-swf Gasphase (DE-588)4156038-3 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumnitrid (DE-588)4375592-6 s Gasphase (DE-588)4156038-3 s Plasma (DE-588)4046249-3 s DE-604 Erscheint auch als Online-Ausgabe urn:nbn:de:kobv:co1-opus4-30710 https://nbn-resolving.org/urn:nbn:de:kobv:co1-opus4-30710 Resolving-System kostenfrei Volltext http://opus4.kobv.de/opus4-btu/frontdoor/index/index/docId/3071 kostenfrei Volltext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027455306&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Zwierz, Radosław Piotr Plasma enhanced growth of GaN single crystalline layers from vapour phase Galliumnitrid (DE-588)4375592-6 gnd Plasma (DE-588)4046249-3 gnd Gasphase (DE-588)4156038-3 gnd |
| subject_GND | (DE-588)4375592-6 (DE-588)4046249-3 (DE-588)4156038-3 (DE-588)4113937-9 |
| title | Plasma enhanced growth of GaN single crystalline layers from vapour phase |
| title_auth | Plasma enhanced growth of GaN single crystalline layers from vapour phase |
| title_exact_search | Plasma enhanced growth of GaN single crystalline layers from vapour phase |
| title_full | Plasma enhanced growth of GaN single crystalline layers from vapour phase Radosław Piotr Zwierz |
| title_fullStr | Plasma enhanced growth of GaN single crystalline layers from vapour phase Radosław Piotr Zwierz |
| title_full_unstemmed | Plasma enhanced growth of GaN single crystalline layers from vapour phase Radosław Piotr Zwierz |
| title_short | Plasma enhanced growth of GaN single crystalline layers from vapour phase |
| title_sort | plasma enhanced growth of gan single crystalline layers from vapour phase |
| topic | Galliumnitrid (DE-588)4375592-6 gnd Plasma (DE-588)4046249-3 gnd Gasphase (DE-588)4156038-3 gnd |
| topic_facet | Galliumnitrid Plasma Gasphase Hochschulschrift |
| url | https://nbn-resolving.org/urn:nbn:de:kobv:co1-opus4-30710 http://opus4.kobv.de/opus4-btu/frontdoor/index/index/docId/3071 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027455306&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT zwierzradosławpiotr plasmaenhancedgrowthofgansinglecrystallinelayersfromvapourphase |