MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
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| Format: | Elektronisch E-Book |
| Sprache: | English |
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2014
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| Schriftenreihe: | Analog Circuits and Signal Processing
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| Online-Zugang: | BTU01 FHA01 FHI01 FHN01 FHR01 FKE01 FRO01 FWS01 FWS02 UBY01 Volltext Inhaltsverzeichnis Abstract |
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| 100 | 1 | |a Srivastava, Viranjay M. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |c by Viranjay M. Srivastava, Ghanshyam Singh |
| 264 | 1 | |c 2014 | |
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| 500 | |a This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches | ||
| 505 | 0 | |a Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Telecommunication | |
| 650 | 4 | |a Systems engineering | |
| 650 | 4 | |a Circuits and Systems | |
| 650 | 4 | |a Communications Engineering, Networks | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Ingenieurwissenschaften | |
| 700 | 1 | |a Singh, Ghanshyam |e Sonstige |4 oth | |
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Datensatz im Suchindex
| DE-BY-FWS_katkey | 1015825 |
|---|---|
| _version_ | 1806174833029939200 |
| adam_text | MOSFET TECHNOLOGIES FOR DOUBLE-POLE FOUR-THROW RADIO-FREQUENCY SWITCH
/ SRIVASTAVA, VIRANJAY M.
: 2014
TABLE OF CONTENTS / INHALTSVERZEICHNIS
INTRODUCTION
DESIGN OF DOUBLE-POLE FOUR-THROW RF SWITCH
DESIGN OF DOUBLE-GATE MOSFET
DOUBLE-POLE FOUR-THROW RF SWITCH BASED ON DOUBLE-GATE MOSFET
CYLINDRICAL SURROUNDING DOUBLE-GATE RF MOSFET
HAFNIUM DIOXIDE BASED DOUBLE-POLE FOUR-THROW DOUBLE-GATE RF CMOS SWITCH
TESTING OFMOSFET SURFACES USING IMAGE ACQUISITION
CONCLUSIONS AND FUTURE SCOPE
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
MOSFET TECHNOLOGIES FOR DOUBLE-POLE FOUR-THROW RADIO-FREQUENCY SWITCH
/ SRIVASTAVA, VIRANJAY M.
: 2014
ABSTRACT / INHALTSTEXT
THIS BOOK PROVIDES ANALYSIS AND DISCUSSES THE DESIGN OF VARIOUS MOSFET
TECHNOLOGIES WHICH ARE USED FOR THE DESIGN OF DOUBLE-POLE FOUR-THROW
(DP4T) RF SWITCHES FOR NEXT GENERATION COMMUNICATION SYSTEMS. THE
AUTHORS DISCUSS THE DESIGN OF THE (DP4T) RF SWITCH BY USING THE
DOUBLE-GATE (DG) MOSFET, AS WELL AS THE CYLINDRICAL SURROUNDING
DOUBLE-GATE (CSDG) MOSFET. THE EFFECT OF HFO2 (HIGH DIELECTRIC
MATERIAL) IN THE DESIGN OF DG MOSFET AND CSDG MOSFET IS ALSO EXPLORED.
COVERAGE INCLUDES COMPARISON OF SINGLE-GATE MOSFET AND DOUBLE-GATE
MOSFET SWITCHING PARAMETERS, AS WELL AS TESTING OF MOSFETS PARAMETERS
USING IMAGE ACQUISITION. PROVIDES A SINGLE-SOURCE
REFERENCE TO THE LATEST TECHNOLOGIES FOR THE DESIGN OF DOUBLE-GATE
MOSFET, CYLINDRICAL SURROUNDING DOUBLE-GATE MOSFET AND HFO2 BASED
MOSFET; EXPLAINS THE DESIGN OF RF SWITCHES USING THE
TECHNOLOGIES PRESENTED AND SIMULATES SWITCHES;
VERIFIES PARAMETERS AND DISCUSSES FEASIBILITY OF DEVICES AND SWITCHES
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
| any_adam_object | 1 |
| author | Srivastava, Viranjay M. |
| author_facet | Srivastava, Viranjay M. |
| author_role | aut |
| author_sort | Srivastava, Viranjay M. |
| author_variant | v m s vm vms |
| building | Verbundindex |
| bvnumber | BV041470937 |
| collection | ZDB-2-ENG |
| contents | Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope |
| ctrlnum | (OCoLC)865039353 (DE-599)BVBBV041470937 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-3-319-01165-3 |
| format | Electronic eBook |
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| id | DE-604.BV041470937 |
| illustrated | Illustrated |
| indexdate | 2024-08-01T10:55:48Z |
| institution | BVB |
| isbn | 9783319011653 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-026917080 |
| oclc_num | 865039353 |
| open_access_boolean | |
| owner | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| owner_facet | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| physical | 1 Online-Ressource (XV, 199 p.) 55 illus., 45 illus. in color |
| psigel | ZDB-2-ENG |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| record_format | marc |
| series2 | Analog Circuits and Signal Processing |
| spellingShingle | Srivastava, Viranjay M. MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch Introduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope Engineering Telecommunication Systems engineering Circuits and Systems Communications Engineering, Networks Semiconductors Ingenieurwissenschaften |
| title | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |
| title_auth | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |
| title_exact_search | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |
| title_full | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by Viranjay M. Srivastava, Ghanshyam Singh |
| title_fullStr | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by Viranjay M. Srivastava, Ghanshyam Singh |
| title_full_unstemmed | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by Viranjay M. Srivastava, Ghanshyam Singh |
| title_short | MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch |
| title_sort | mosfet technologies for double pole four throw radio frequency switch |
| topic | Engineering Telecommunication Systems engineering Circuits and Systems Communications Engineering, Networks Semiconductors Ingenieurwissenschaften |
| topic_facet | Engineering Telecommunication Systems engineering Circuits and Systems Communications Engineering, Networks Semiconductors Ingenieurwissenschaften |
| url | https://doi.org/10.1007/978-3-319-01165-3 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026917080&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026917080&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
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