MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
2014
|
| Schriftenreihe: | Analog Circuits and Signal Processing
|
| Schlagworte: | |
| Online-Zugang: | BTU01 FHA01 FHI01 FHN01 FHR01 FKE01 FRO01 FWS01 FWS02 UBY01 Volltext Inhaltsverzeichnis Abstract |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Beschreibung: | This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition. · Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; · Explains the design of RF switches using the technologies presented and simulates switches; · Verifies parameters and discusses feasibility of devices and switches |
|---|---|
| Beschreibung: | 1 Online-Ressource (XV, 199 p.) 55 illus., 45 illus. in color |
| ISBN: | 9783319011653 |
| DOI: | 10.1007/978-3-319-01165-3 |