Advanced silicon materials for photovoltaic applications

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Weitere Verfasser: Pizzini, Sergio (HerausgeberIn)
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Veröffentlicht: Chichester Wiley 2012
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Datensatz im Suchindex

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adam_text Contents Preface xi List of Contributors xv 1. Silicon Science and Technology as the Background of the Current and Future Knowledge Society 1 Sergio Pizzini 1.1 Introduction 1 1.2 Silicon Birth from a Thermonuclear Nucleosynthetic Process 2 1.3 Silicon Key Properties 2 1.3.1 Chemical and Structural Properties 2 1.3.2 Point Defects 7 1.3.3 Radiation Damage and Radiation Hardness 7 1.4 Advanced Silicon Applications 9 1.4.1 Silicon Radiation Detectors 9 1.4.2 Photovoltaic Cells for Space Vehicles and Satellite Applications 11 1.4.3 Advanced Components Based on the Dislocation Luminescence in Silicon 12 1.4.4 Silicon Nanostructures 14 References 15 2. Processes 21 Bruno Ceccaroli and Sergio Pizzini 2.1 Introduction 21 2.2 Gas-Phase Processes 23 2.2.1 Preparation and Synthesis of Volatile Silicon Compounds 23 2.2.2 Purification of Volatile Silicon Compounds 30 2.2.3 Decomposition of Volatile Precursors to Elemental Silicon 30 2.2.4 Most Common Reactors 33 2.2.5 Recovery of By-Products 38 2.3 Production of MG and UMG Silicon and Further Refining Up to Solar Grade by Chemical and Physical Processes 40 2.3.1 MG Silicon Production 42 2.3.2 Metallurgical Refining Processes 47 2.3.3 Metal-Metal Extraction Processes 52 vi Contents 2.3.4 Solid/Liquid Extraction Techniques 54 2.3.5 Final Purification by Directional Solidification 55 2.3.6 Solar-Grade Silicon Production from Pure Raw Materials or Via the Direct Route 58 2.4 Fluoride Processes 59 2.5 Silicon Production/Refining with High-Temperature Plasmochemical Processes 61 2.5.1 Silicon Production Via Plasma Processes 62 2.5.2 Silicon Refining Via Plasma Processes 63 2.6 Electrochemical Processes: Production of Silicon Without Carbon as Reductant 64 2.7 Conclusions 68 Acknowledgements 69 References 70 3. Role of Impurities in Solar Silicon 79 Gianluca Coletti, Daniel Macdonald and Deren Yang 3.1 Introduction 79 3.2 Sources and Refinements of Impurities 79 3.3 Segregation of Impurities During Silicon Growth 86 3.3.1 Equilibrium Segregation Coefficients 86 3.3.2 Effective Segregation Coefficient 87 3.3.3 Distribution of Impurities in Silicon Crystal Due to Segregation 90 3.4 Role of Metallic Impurities 92 3.4.1 Solubility and Diffusivity 92 3.4.2 Impact on Charge-Carrier Recombination 94 3.4.3 Modeling the Impact of Metallic Impurities on the Solar-Cell Performance 96 3.5 Role of Dopants 101 3.5.1 Carrier Mobilities in Compensated Silicon 101 3.5.2 Recombination in Compensated Silicon 103 3.5.3 Dopant-Related Recombination Centers 105 3.5.4 Segregation Effects During Ingot Growth 106 3.5.5 Detecting Dopants in Compensated Silicon 107 3.6 Role of Light Elements 108 3.6.1 Oxygen 108 3.6.2 Carbon 109 3.6.3 Nitrogen 111 3.6.4 Germanium 113 3.7 Arriving at Solar-Grade Silicon Feedstock Definitions 114 References 118 4. Gettering Processes and the Role of Extended Defects 127 Michael Seibt and Vítaly Kveder 4.1 Introduction 127 Contents vii 4.2 Properties of Transition-Metal Impurities in Silicon 130 4.2.1 Solubility of Transition-Metal Impurities 131 4.2.2 Diffusion of Transition-Metal Impurities 136 4.3 Gettering Mechanisms and their Modeling 139 4.3.1 Segregation Gettering 140 4.3.2 Relaxation Gettering 142 4.3.3 Injection Gettering 142 4.3.4 Modeling of Gettering Kinetics 143 4.3.5 Aluminum Gettering 144 4.3.6 Phosphorus-Diffusion Gettering 146 4.3.7 Boron-Diffusion Gettering 149 4.4 Bulk Processes Affecting Gettering Efficiency and Kinetics 150 4.4.1 Metal-Silicide Precipitates 150 4.4.2 Dislocations 154 4.4.3 Grain Boundaries 167 4.4.4 Light-Element Impurities and Related Defects 169 4.5 Gettering Strategies and Defect Engineering 170 4.6 Conclusions 173 Acknowledgements 173 References 174 5. Advanced Characterization Techniques 189 Anna Cavallini, Daniela Cavalcoli and Laura Polenta 5.1 Introduction 189 5.2 Surface Photovoltage Spectroscopy 190 5.2.1 The Basic Principles 191 5.2.2 SPS Setup 193 5.2.3 Surface Photovoltage Spectroscopy of Hydrogenated Nanocrystalline Silicon (nc-Si.H) 194 5.3 Photocurrent Spectroscopy 196 5.3.1 Basic Principles 197 5.3.2 Spectral Photoconductivity Setup 199 5.3.3 Application of Spectral Photoconductivity to Silicon and Silicon Devices 201 5.4 Optical (Light) Beam Induced Current (OBIC or LBIC) 202 5.4.1 Basic Principles of Optical Beam Induced Current Method 202 5.4.2 Determination of the Electric Field and Depletion Region Extent in Particle Detectors by OBIC 204 5.5 Scanning Probe Microscopy for the Nanoscale Electrical Characterization of Semiconductors for PV Applications 207 5.6 Concluding Remarks 210 References 210 6. Advanced Analytical Techniques for Solar-Grade Feedstock 215 Richard S. Hockett 6.1 Introduction 215 viii Contents 6.2 Review of Analytical Techniques 216 6.3 GDMS Analysis of PV Si 222 6.4 SIMS Analysis of PV Si 223 6.5 Applications of SIMS and GDMS for PV Si Feedstock Studies 227 6.5.1 Impurity Segregation in Directional Solidified (DS) Silicon Blocks 227 6.5.2 Specification of [C], [O] and [N] in Solar-Grade Silicon Feedstock to be Used in DS Furnaces 229 6.5.3 SIMS Capability for Reduced-Cost Measurement of [C, 0, B, P] 230 6.5.4 Problems in Conversion Between Resistivity and Dopant Concentration in Highly Compensated Silicon 231 References 232 7. Thin-Film Deposition Processes 235 J.K. Rath 7.1 Introduction 235 7.2 Deposition Techniques of Thin-Film Silicon 235 7.2.1 Standard Radio-Frequency Plasma-Enhanced С VD 236 7.2.2 Very High Frequency Plasma-Enhanced CVD 236 7.2.3 Microwave Plasma-Enhanced CVD 237 7.2.4 Expanded Thermal Plasma (ETP) Deposition 237 7.2.5 Low-Energy Plasma-Enhanced PECVD 238 7.2.6 Hot-Wire CVD 238 7.3 In Situ Diagnosis of Growth Conditions 239 7.3.1 Electrical: Current-Voltage (I-V) Probe 239 7.3.2 Optical Emission Spectroscopy (OES) 240 7.3.3 Infrared Spectroscopy 243 7.3.4 Ellipsometry 244 7.3.5 Ion Energy Probe 245 7.4 Challenges of Deposition at High Growth Rates and Low Substrate Temperatures 246 7.4.1 Growth-Process Models 246 7.4.2 Inhomogeneity of Growth 250 7.4.3 Growth at High Deposition Rates 251 7.4.4 Silane Dissociation Efficiency and Depletion Criteria for nc-Si Deposition 252 7.4.5 Low-Temperature (LT) Deposition 254 7.4.6 Structural Evolution at Low Temperature 257 7.4.7 Transient Plasma 260 7.5 Upscaling to Large-Area and Industrial Processing: Critical Analysis of Various Fabrication Processes 270 Acknowledgements 273 References 273 Contents ix 8. Modeling of Thin-Film Deposition Processes 287 Carlo Cavalloni 8.1 Introduction 287 8.2 Modeling the Plasma Discharge 290 8.3 Modeling of the Gas Phase and Surface Kinetics 295 8.3.1 Gas-Phase Kinetic Scheme 297 8.3.2 Surface Kinetic Scheme 301 8.3.3 On the Consistent Solution of the Plasma Discharge and Kinetic Models: Theory and Examples 303 8.4 Modeling of the Thin-Film Morphological Evolution 303 8.5 Status of the Field and Perspectives 308 References 309 9. Thin-Film Silicon Solar Cells 311 J.K. Rath 9.1 Introduction 311 9.2 Second-Generation Solar Cells: Advantages Compared to the First Generation 312 9.3 Drift-Type Thin-Film Silicon Solar Cells: Substrates and Configuration 314 9.4 Material Considerations for Thin-Film Silicon Solar Cells 316 9.4.1 Amorphous Silicon 316 9.4.2 Amorphous Silicon-Germanium 317 9.4.3 Nanocrystalline Silicon 317 9.4.4 Light Confinement 318 9.5 Present Status of Drift-Type Thin-Film Silicon Solar Cells 321 9.5.1 Recent R&D Results on Thin-Film Silicon Solar Cells 322 9.5.2 Industrial Scenario 322 9.6 Technological Issues 325 9.6.1 High Deposition Rate 325 9.6.2 Thin Cells 325 9.7 Third-Generation Thin-Film Silicon Cell 329 9.8 Solar Cells on Plastics 331 9.8.1 Transfer Method 331 9.8.2 Direct Deposition 332 9.9 Hybrid Cells 334 9.10 Industrial Scenario of Thin-Film Silicon-based Solar Cells 336 9.11 Challenges for Thin-Film Silicon Solar-Module Fabrication 338 Acknowledgements 341 References -*41 10. Innovative Quantum Effects in Silicon for Photovoltaic Applications 355 Zhizhong Yuan, Aleksei Anopchenko and Lorenzo Pavesi 10.1 Basic Principles of 3rd-Generation Solar Cells 355 10.1.1 The Need for a New Generation of Solar Cells 355 χ Contents 10.1.2 Limitations in Early Generations 356 10.1.3 3 ^-Generation Options 357 10.2 The Advantages of Using Silicon Nanocrystals 359 10.2.1 Fabrication and Advantages of Si-NCs 359 10.2.2 Quantum Confinement Effect in Si-NCs 360 10.3 Applications of Si-NCs in the 3rd-Generation Solar Cells 362 10.3.1 All-Silicon Tandem Solar Cells 362 10.3.2 Hot-Carrier Solar Cells 364 10.3.3 Intermediate-Band Solar Cells 366 10.3.4 Multiple-Carrier Generation 369 10.3.5 Downshifter Cell 372 10.4 Challenges and Solutions 375 10.4.1 Size Control 375 10.4.2 Carrier Transport 375 10.4.3 Absorption 378 10.4.4 Technological Constraints 381 10.5 Conclusions 381 Acknowledgements 381 References 381 Index 393 Advanced Silicon Materials for Photovoltaic Applications Editor SERGIO PIZZINI University of Milano-Bicocca, Milan, Italy Today, the silicon feedstock tor photovoltaic cells comes from processes which were originally developed for the microelectronic industry. It covers almost 90% of the photovoltaic market, with mass production volume at least one order of magnitude larger than those devoted to microelectronics. However, it is hard to imagine that this kind of feedstock (extremely pure but heavily penalized by its high energy cost) could remain the only source of silicon for a photovoltaic market which is in continuous expansion, and which has a cumulative growth rate in excess of 30% in the last few years. Even though reports suggest that the silicon share will slowly decrease in the next twenty years, finding a way to manufacture a specific solar grade feedstock in large quantities, at a low cost while maintaining the quality needed, still remains a crucial issue. Thin film and quantum confinement-based silicon cells might be a complementary solution. Advanced Silicon Materials for Photovoltaic Applications has been designed to describe the full potentialities of silicon as a multipurpose material and covers: • Physical, chemical and structural properties oí silicon • Production routes including the promise ot low co>t feedstock tor PV applications ■> Detect engineering and the role of impurities and detects > Characterization techniques, and advanced analytical techniques for metallic and non- metallic impurities • Thin film silicon and thin film solar cells Innovative quantum effects generation solar cells With contributions from internationally recognized authorities, this book gives a comprehensive analysis ot the state-ot-the-art ot process technologies and material properties, essential for anyone interested in the application and development ofphotovoltaics. Π Also available as an e-book WILEY wilev.com
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spellingShingle Advanced silicon materials for photovoltaic applications
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Photovoltaic cells Materials
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title Advanced silicon materials for photovoltaic applications
title_auth Advanced silicon materials for photovoltaic applications
title_exact_search Advanced silicon materials for photovoltaic applications
title_full Advanced silicon materials for photovoltaic applications [ed.] Sergio Pizzini
title_fullStr Advanced silicon materials for photovoltaic applications [ed.] Sergio Pizzini
title_full_unstemmed Advanced silicon materials for photovoltaic applications [ed.] Sergio Pizzini
title_short Advanced silicon materials for photovoltaic applications
title_sort advanced silicon materials for photovoltaic applications
topic Silicon solar cells
Photovoltaic cells Materials
Solarzelle (DE-588)4181740-0 gnd
Silicium (DE-588)4077445-4 gnd
Fotovoltaik (DE-588)4121476-6 gnd
topic_facet Silicon solar cells
Photovoltaic cells Materials
Solarzelle
Silicium
Fotovoltaik
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