Nanoscale transistors device physics, modeling and simulation
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| Hauptverfasser: | , |
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| Format: | Buch |
| Sprache: | English |
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New York [u.a.]
Springer
2010
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| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV037280950 | ||
| 003 | DE-604 | ||
| 005 | 20110408 | ||
| 007 | t| | ||
| 008 | 110315s2010 gw ad|| |||| 00||| eng d | ||
| 020 | |a 9781441939159 |9 978-1-4419-3915-9 | ||
| 035 | |a (OCoLC)917841361 | ||
| 035 | |a (DE-599)BVBBV037280950 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BE | ||
| 049 | |a DE-11 | ||
| 084 | |a ZN 3700 |0 (DE-625)157333: |2 rvk | ||
| 084 | |a 530 |2 sdnb | ||
| 084 | |a ELT 321f |2 stub | ||
| 100 | 1 | |a Lundstrom, Mark |d 1951- |e Verfasser |0 (DE-588)138423946 |4 aut | |
| 245 | 1 | 0 | |a Nanoscale transistors |b device physics, modeling and simulation |c Mark Lundstrom ; Jing Guo |
| 264 | 1 | |a New York [u.a.] |b Springer |c 2010 | |
| 300 | |a VI, 217 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Nanoelektronik |0 (DE-588)4732034-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Transistortechnologie |0 (DE-588)4185898-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nanotechnologie |0 (DE-588)4327470-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nanostruktur |0 (DE-588)4204530-7 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Nanotechnologie |0 (DE-588)4327470-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Nanoelektronik |0 (DE-588)4732034-5 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Transistortechnologie |0 (DE-588)4185898-0 |D s |
| 689 | 2 | 1 | |a Nanostruktur |0 (DE-588)4204530-7 |D s |
| 689 | 2 | |5 DE-604 | |
| 700 | 1 | |a Guo, Jing |e Verfasser |4 aut | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-021193756 | |
Datensatz im Suchindex
| _version_ | 1819279068294545408 |
|---|---|
| any_adam_object | |
| author | Lundstrom, Mark 1951- Guo, Jing |
| author_GND | (DE-588)138423946 |
| author_facet | Lundstrom, Mark 1951- Guo, Jing |
| author_role | aut aut |
| author_sort | Lundstrom, Mark 1951- |
| author_variant | m l ml j g jg |
| building | Verbundindex |
| bvnumber | BV037280950 |
| classification_rvk | ZN 3700 |
| classification_tum | ELT 321f |
| ctrlnum | (OCoLC)917841361 (DE-599)BVBBV037280950 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01512nam a2200445 c 4500</leader><controlfield tag="001">BV037280950</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20110408 </controlfield><controlfield tag="007">t|</controlfield><controlfield tag="008">110315s2010 gw ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781441939159</subfield><subfield code="9">978-1-4419-3915-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)917841361</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV037280950</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-11</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 3700</subfield><subfield code="0">(DE-625)157333:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 321f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lundstrom, Mark</subfield><subfield code="d">1951-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)138423946</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nanoscale transistors</subfield><subfield code="b">device physics, modeling and simulation</subfield><subfield code="c">Mark Lundstrom ; Jing Guo</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VI, 217 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanoelektronik</subfield><subfield code="0">(DE-588)4732034-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Transistortechnologie</subfield><subfield code="0">(DE-588)4185898-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanotechnologie</subfield><subfield code="0">(DE-588)4327470-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Nanotechnologie</subfield><subfield code="0">(DE-588)4327470-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Nanoelektronik</subfield><subfield code="0">(DE-588)4732034-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Transistortechnologie</subfield><subfield code="0">(DE-588)4185898-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Guo, Jing</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-021193756</subfield></datafield></record></collection> |
| id | DE-604.BV037280950 |
| illustrated | Illustrated |
| indexdate | 2024-12-24T00:22:01Z |
| institution | BVB |
| isbn | 9781441939159 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-021193756 |
| oclc_num | 917841361 |
| open_access_boolean | |
| owner | DE-11 |
| owner_facet | DE-11 |
| physical | VI, 217 S. Ill., graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Springer |
| record_format | marc |
| spelling | Lundstrom, Mark 1951- Verfasser (DE-588)138423946 aut Nanoscale transistors device physics, modeling and simulation Mark Lundstrom ; Jing Guo New York [u.a.] Springer 2010 VI, 217 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Nanoelektronik (DE-588)4732034-5 gnd rswk-swf Transistortechnologie (DE-588)4185898-0 gnd rswk-swf Nanotechnologie (DE-588)4327470-5 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Nanotechnologie (DE-588)4327470-5 s DE-604 Nanoelektronik (DE-588)4732034-5 s Transistortechnologie (DE-588)4185898-0 s Nanostruktur (DE-588)4204530-7 s Guo, Jing Verfasser aut |
| spellingShingle | Lundstrom, Mark 1951- Guo, Jing Nanoscale transistors device physics, modeling and simulation Nanoelektronik (DE-588)4732034-5 gnd Transistortechnologie (DE-588)4185898-0 gnd Nanotechnologie (DE-588)4327470-5 gnd Nanostruktur (DE-588)4204530-7 gnd |
| subject_GND | (DE-588)4732034-5 (DE-588)4185898-0 (DE-588)4327470-5 (DE-588)4204530-7 |
| title | Nanoscale transistors device physics, modeling and simulation |
| title_auth | Nanoscale transistors device physics, modeling and simulation |
| title_exact_search | Nanoscale transistors device physics, modeling and simulation |
| title_full | Nanoscale transistors device physics, modeling and simulation Mark Lundstrom ; Jing Guo |
| title_fullStr | Nanoscale transistors device physics, modeling and simulation Mark Lundstrom ; Jing Guo |
| title_full_unstemmed | Nanoscale transistors device physics, modeling and simulation Mark Lundstrom ; Jing Guo |
| title_short | Nanoscale transistors |
| title_sort | nanoscale transistors device physics modeling and simulation |
| title_sub | device physics, modeling and simulation |
| topic | Nanoelektronik (DE-588)4732034-5 gnd Transistortechnologie (DE-588)4185898-0 gnd Nanotechnologie (DE-588)4327470-5 gnd Nanostruktur (DE-588)4204530-7 gnd |
| topic_facet | Nanoelektronik Transistortechnologie Nanotechnologie Nanostruktur |
| work_keys_str_mv | AT lundstrommark nanoscaletransistorsdevicephysicsmodelingandsimulation AT guojing nanoscaletransistorsdevicephysicsmodelingandsimulation |