Metal gate development for nano-CMOS technologies
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2008
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| Schriftenreihe: | Berichte aus der Halbleitertechnik
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| Online-Zugang: | Inhaltsverzeichnis |
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MARC
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Datensatz im Suchindex
| DE-BY-TUM_call_number | 0001 2010 A 2524 |
|---|---|
| DE-BY-TUM_katkey | 1725187 |
| DE-BY-TUM_location | Mag |
| DE-BY-TUM_media_number | 040007039938 |
| _version_ | 1820852467648167936 |
| adam_text | CONTENTS 1 INTRODUCTION 1 2 MOS FUNDAMENTALS AND METAL GATE TECHNOLOGY 5
2.1 MOS CAPACITOR 5 2.1.1 IDEAL MOS CAPACITOR 6 2.1.2 NON-IDEAL MOS
DEVICES 10 2.1.3 MOS CAPACITOR CHARACTERISTICS 13 2.1.4 BASIC MOSFET
OPERATION 17 2.2 NANO-SCALE METAL GATE TECHNOLOGY 20 2.2.1 LIMITATIONS
OF POLYSILICON GATE 20 2.2.2 ADVANTAGES OF METAL GATE TECHNOLOGY 22
2.2.3 CONSTRAINTS IN METAL GATE INTEGRATION 24 2.2.4 METAL GATE
SELECTION CRITERIA 30 3 PROCESS TECHNOLOGY AND DEVICE FABRICATION 32 3.1
APPLIED TECHNOLOGIES 32 3.1.1 PROCESS TECHNOLOGY MODULES 32 3.1.2
MATERIAL ANALYSIS 40 3.1.3 SIMULATION 41 3.2 PREPARATION FOR DEVICE
FABRICATION AND CHARACTERIZATION 42 3.2.1 PROCESS DEVELOPMENT 43 3.2.2
METAL GATE DEPOSITION 46 3.2.3 ETCHING OF METAL GATE 48 3.2.4 HIGH-K/SI
INTERFACE ANALYSIS 52 4 METAL GATE DEVICES 55 4.1 W GATE 56 4.1.1 W/STO
2 GATE STACK 56 GESCANNT DURCH BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/988123606 DIGITALISIERT DURCH 4.1.2 W/HFO 2 GATE STACK
59 4.1.3 IMPACT OF GATE DIELECTRIC ON W-GATE 61 4.1.4 W-GATED MOSFET 63
4.1.5 SUMMARY: W GATE 64 4.2 W/AIN X GATE 66 4.2.1 W/ALN X /SIO 2 GATE
STACK 66 4.2.2 W/ALN X /HFO 2 GATE STACK 69 4.2.3 W/ALN-GATED MOSFET 71
4.2.4 SUMMARY: W/AIN X GATE 73 4.3 TINGATE 73 4.3.1 TIN/SIO 2 GATE STACK
74 4.3.2 TTN/HFOT GATE STACK 77 4.3.3 IMPACT OF GATE DIELECTRIC ON
TIN-GATE 82 4.3.4 TIN-GATED MOSFETS 83 4.3.5 SUMMARY: TIN GATE 84 4.4
NIALN GATE 84 4.4.1 N1A1N/5O 2 GATE STACK 85 4.4.2 NIALN/TF/OA GATE
STACK 89 4.4.3 IMPACT OF GATE DIELECTRIC ON NIALN-GATE 92 4.4.4
NIALN-GATED MOSFET 92 4.4.5 SUMMARY: NIALN GATE 93 4.5 METAL GATED
DEVICE SUMMARY 94 5 SUMMARY 99 6 FUTURE PERSPECTIVES 103 7 PUBLICATIONS
107 LITERATURE 123 A ABBREVIATION AND SYMBOL LIST 124 B CURRICULUM VITAE
126 C ACKNOWLEDGMENT 127 D DEUTSCHE ZUSAMMENFASSUNG 128
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| format | Thesis Book |
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| id | DE-604.BV036111499 |
| illustrated | Illustrated |
| indexdate | 2024-12-23T23:01:27Z |
| institution | BVB |
| isbn | 9783832270834 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019001670 |
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| physical | 138 S. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Shaker |
| record_format | marc |
| series2 | Berichte aus der Halbleitertechnik |
| spellingShingle | Efavi, Johnson Kwame Metal gate development for nano-CMOS technologies |
| subject_GND | (DE-588)4113937-9 |
| title | Metal gate development for nano-CMOS technologies |
| title_auth | Metal gate development for nano-CMOS technologies |
| title_exact_search | Metal gate development for nano-CMOS technologies |
| title_full | Metal gate development for nano-CMOS technologies Johnson Kwame Efavi |
| title_fullStr | Metal gate development for nano-CMOS technologies Johnson Kwame Efavi |
| title_full_unstemmed | Metal gate development for nano-CMOS technologies Johnson Kwame Efavi |
| title_short | Metal gate development for nano-CMOS technologies |
| title_sort | metal gate development for nano cmos technologies |
| topic_facet | Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019001670&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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