Impact ionization numerical treatment for semiconductor device simulation
This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to sili...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Saarbrücken
VDM Verl. Dr. Müller
2008
|
| Schlagworte: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV035157944 | ||
| 003 | DE-604 | ||
| 005 | 20081210 | ||
| 007 | t | ||
| 008 | 081113s2008 |||| 00||| eng d | ||
| 020 | |a 9783639082968 |9 978-3-63908296-8 | ||
| 035 | |a (OCoLC)374675504 | ||
| 035 | |a (DE-599)BVBBV035157944 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 | ||
| 050 | 0 | |a QC702.7.E38 | |
| 084 | |a ELT 303f |2 stub | ||
| 084 | |a DAT 780f |2 stub | ||
| 100 | 1 | |a May, Christian Peter |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Impact ionization |b numerical treatment for semiconductor device simulation |c Christian Peter May |
| 264 | 1 | |a Saarbrücken |b VDM Verl. Dr. Müller |c 2008 | |
| 300 | |a 116 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 520 | 3 | |a This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to silicon for semiconductor device simulation"--Back cover. | |
| 650 | 4 | |a Electron impact ionization | |
| 650 | 4 | |a Numerical analysis | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Silicon | |
| 650 | 0 | 7 | |a Ladungstransport |0 (DE-588)4166400-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Simulation |0 (DE-588)4055072-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | 1 | |a Ladungstransport |0 (DE-588)4166400-0 |D s |
| 689 | 0 | 2 | |a Simulation |0 (DE-588)4055072-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-016965104 | ||
Datensatz im Suchindex
| DE-BY-TUM_call_number | 0002/ELT 303f 2008 A 9937 |
|---|---|
| DE-BY-TUM_katkey | 1655040 |
| DE-BY-TUM_media_number | 040006971195 |
| _version_ | 1816712856684462080 |
| adam_txt | |
| any_adam_object | |
| any_adam_object_boolean | |
| author | May, Christian Peter |
| author_facet | May, Christian Peter |
| author_role | aut |
| author_sort | May, Christian Peter |
| author_variant | c p m cp cpm |
| building | Verbundindex |
| bvnumber | BV035157944 |
| callnumber-first | Q - Science |
| callnumber-label | QC702 |
| callnumber-raw | QC702.7.E38 |
| callnumber-search | QC702.7.E38 |
| callnumber-sort | QC 3702.7 E38 |
| callnumber-subject | QC - Physics |
| classification_tum | ELT 303f DAT 780f |
| ctrlnum | (OCoLC)374675504 (DE-599)BVBBV035157944 |
| discipline | Informatik Elektrotechnik |
| discipline_str_mv | Informatik Elektrotechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01725nam a2200433 c 4500</leader><controlfield tag="001">BV035157944</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20081210 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">081113s2008 |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783639082968</subfield><subfield code="9">978-3-63908296-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)374675504</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV035157944</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC702.7.E38</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 303f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">DAT 780f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">May, Christian Peter</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Impact ionization</subfield><subfield code="b">numerical treatment for semiconductor device simulation</subfield><subfield code="c">Christian Peter May</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Saarbrücken</subfield><subfield code="b">VDM Verl. Dr. Müller</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">116 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1="3" ind2=" "><subfield code="a">This work "...briefly introduces the theory needed for a physical understanding of the impact ionization process in semiconductors. It focuses...on computational aspects and empirical numerical studies explaining a way to efficiently calculate impact ionization rates, especially applied to silicon for semiconductor device simulation"--Back cover.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electron impact ionization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Numerical analysis</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ladungstransport</subfield><subfield code="0">(DE-588)4166400-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterbauelement</subfield><subfield code="0">(DE-588)4113826-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Ladungstransport</subfield><subfield code="0">(DE-588)4166400-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Simulation</subfield><subfield code="0">(DE-588)4055072-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016965104</subfield></datafield></record></collection> |
| id | DE-604.BV035157944 |
| illustrated | Not Illustrated |
| index_date | 2024-07-02T22:49:30Z |
| indexdate | 2024-11-25T17:26:05Z |
| institution | BVB |
| isbn | 9783639082968 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016965104 |
| oclc_num | 374675504 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | 116 S. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | VDM Verl. Dr. Müller |
| record_format | marc |
| spellingShingle | May, Christian Peter Impact ionization numerical treatment for semiconductor device simulation Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport (DE-588)4166400-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| subject_GND | (DE-588)4166400-0 (DE-588)4113826-0 (DE-588)4055072-2 |
| title | Impact ionization numerical treatment for semiconductor device simulation |
| title_auth | Impact ionization numerical treatment for semiconductor device simulation |
| title_exact_search | Impact ionization numerical treatment for semiconductor device simulation |
| title_exact_search_txtP | Impact ionization numerical treatment for semiconductor device simulation |
| title_full | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_fullStr | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_full_unstemmed | Impact ionization numerical treatment for semiconductor device simulation Christian Peter May |
| title_short | Impact ionization |
| title_sort | impact ionization numerical treatment for semiconductor device simulation |
| title_sub | numerical treatment for semiconductor device simulation |
| topic | Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport (DE-588)4166400-0 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| topic_facet | Electron impact ionization Numerical analysis Semiconductors Silicon Ladungstransport Halbleiterbauelement Simulation |
| work_keys_str_mv | AT maychristianpeter impactionizationnumericaltreatmentforsemiconductordevicesimulation |