Chemical vapour deposition precursors, processes and applications

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adam_text Contents Chapter 1 Overview of Chemical Vapour Deposition Anthony C. Jones and Michael L. Hitchman 1.1 Basic Definitions 1 1.2 Historical Perspective 2 1.3 Chemical Vapour Deposition Processes 4 1.3.1 Conventional CVD Processes 4 1.3.2 Variants of CVD 7 1.4 CVD Precursors 1 1 1.4.1 Precursor Requirements 1 1 1.4.2 Precursor Volatility Π 1.4.3 Precursor Thermal Stability 14 1.4.4 Precursor Purity and Precursor Analysis 15 1.4.5 Precursor Purification Techniques 17 1.5 CVD Reactors 18 1.6 Materials Deposited by CVD and Applications 22 1.7 Materials Properties 22 1.7.1 Layer Morphology 22 1.7.2 Layer Properties 27 1.8 Postscript 33 References 33 Chapter 2 CVD Reactors and Delivery System Technology Susan P. Krumdieck 2.1 CVD System Overview 37 2.1.1 CVD System Performance 38 2.1.2 Historical Perspective on Reactor Diversity 40 2.2 CVD Process Fundamentals 40 2.2.1 Research and Development of CVD Technology 42 2.2.2 Gas Dynamics and Flow Basics 42 2.2.3 Molecular and Transition Flow Regimes 44 2.2.4 High Vacuum CVD Reactor Deposition Model 47 Chemical Vapour Deposition: Precursors, Processes and Applications Edited by Anthony С Jones and Michael L. Hitchman £ Royal Society of Chemistry 2009 Published by the Royal Society of Chemistry, www.rsc.org Contents 2.2.5 Viscous Flow Regime Convection Mass Transport 49 2.2.6 LPCVD Reactor Deposition Model 50 2.3 System Platform and Equipment Considerations 53 2.3.1 Contamination: Material Selection and Design Considerations 54 2.3.2 Establishing the Vacuum: Pumps and Components 58 2.3.3 Pressure Measurement 65 2.3.4 Flow Control 67 2.3.5 Temperature Measurement 71 2.3.6 Heating Strategies 73 2.4 Conventional CVD Reactors 75 2.4.1 Research-scale Reactors 77 2.4.2 Tube Reactor 77 2.4.3 Showerhead and Planetary Reactors 80 2.5 Liquid Precursor Delivery and Process Control 83 2.5.1 Liquid Injection Delivery Systems 83 2.5.2 Aerosol and Spray Reactors 86 2.6 Deposition Control by Surface Processes 88 2.6.1 ALD Reactors 88 2.6.2 CBE Reactors 89 References 91 Chapter 3 Modeling CVD Processes Mark D. Aliendorf, Theodore. M. Besmann, Robert J. Kee and Mark T. Swihart 3.1 Introduction 93 3.2 Thermodynamic Modeling of CVD 95 3.2.1 Application of Thermochemical Modeling to Chemical Vapor Deposition 95 3.2.2 Thermochemistry of CVD 95 3.2.3 Consideration of Non-stoichiometric/Solution Phases 97 3.2.4 Thermochemical Equilibrium Software Packages 101 3.2.5 Thermochemical Data and Databases 102 3.3 Reactor Modeling 103 3.3.1 Chemically Reacting Fluid Flow 103 3.3.2 Rate Controlling Processes 104 3.3.3 General Conservation Equations 104 3.3.4 Boundary and Initial Conditions 106 3.3.5 Computational Solution 108 3.3.6 Uniform Deposits in Complex Reactors 108 3.3.7 Reactor Design 108 3.4 Gas-phase Thermochemistry and Kinetics 112 3.4.1 Ab Initio Methods for Predicting Gas-phase Thermochemistry 113 3.4.2 Sources of Gas-phase Thermodynamic Data 119 3.4.3 Modeling Precursor Pyrolysis 119 3.5 Mechanism Development 125 3.5.1 Kinetic Regimes 125 Contents 3.5.2 Global versus Elementary Mechanisms 126 3.5.3 Gas-phase Chemistry 127 3.5.4 Sources of Gas-phase Kinetics Information 129 3.5.5 Surface Chemistry 129 3.6 Particle Formation and Growth 141 3.6.1 Introduction 141 3.6.2 Modeling Approaches 141 3.6.3 Mechanisms of Particle Formation, Growth and Transport 146 3.6.4 Particle Formation: Modeling Examples 149 3.6.5 Summary 150 References 15 1 Chapter 4 Atomic Layer Deposition Mikko Ritala and Jaakko Niinistö 158 158 159 161 167 167 167 170 175 181 182 182 185 187 188 188 190 191 191 192 192 192 197 197 197 197 198 198 199 199 199 200 200 4.1 Introduction 4.2 Basic Features of ALD 4.2.1 Principle and Characteristic Features of ALD 4.2.2 Limitations of ALD 4.2.3 Comparison of ALD and CVD 4.3 Precursor Chemistry 4.3.1 ALD Precursor Requirements 4.3.2 Precursor Types 4.3.3 Characterization of ALD Chemistry 4.4 ALD Reactors 4.4.1 Operation Pressure 4.4.2 Precursor Sources with Valving System 4.4.3 Reaction Chamber 4.4.4 Batch Reactors 4.4.5 Wall Temperature 4.4.6 Plasma Sources 4.4.7 Other Reactor Configurations 4.4.8 Process Control Devices 4.5 Applications of ALD 4.5.1 Thin Film Electroluminescent Displays (TFELs) 4.5.2 Magnetic Heads 4.5.3 Microelectronics 4.5.4 Protective Coatings 4.5.5 Solar Cells 4.5.6 Optical Applications 4.5.7 Heterogeneous Catalysts 4.5.8 Coatings on Powders 4.5.9 Photocatalysts 4.5.10 Coatings on Polymers 4.5.11 Micro-electro-mechanical Systems (MEMS) 4.5.12 Nanotechnology 4.6 Conclusions References Chapter 5 Basic Chemistry of CVD and ALD Precursors Mohammad Azad Malik and Paul O Brien Contents 5.1 Introduction 5.2 Precursor Requirements for CVD 5.2.1 Precursor Purity 5.2.2 Precursor Reactivity 5.2.3 Volatility 5.2.4 Stability in Air 5.2.5 Toxicity 5.2.6 Synthesis 5.2.7 Environment and Cost 5.3 Metal Chalcogenides 5.3.1 Alternative Chalcogenide Precursors 5.3.2 Single-molecule Precursors 5.4 Metal Pnictides 5.4.1 III-V Materials 5.5 Metals 5.5.1 Precursor for Metals 5.5.2 CVD of Metals 5.6 Metal Oxides 5.6.1 Precursors 5.6.2 CVD of Metal Oxides 5.7 Chemistry of ALD Precursors 5.7.1 ALD Precursors ALD Precursors for Oxides ALD of Metals Organometallic Precursors Non-metal Precursors Metal Nitrides Metal Films and Plasma-ALD 5.7.2 5.7.3 5.7.4 5.7.5 5.7.6 5.7.7 References 207 207 207 208 208 208 208 208 208 209 209 211 230 230 234 234 235 237 237 240 245 245 247 249 250 252 253 253 254 Chapter 6 CVD of III-V Compound Semiconductors Jae-Hyun Ryou, Ravi Kanjolia and Russell D. Dupuis 6.1 Fundamentals of III-V Compound Semiconductors 6.1.1 Characteristics of III-V Compound Semiconductors 6.1.2 Material Properties of III-V Compound Semiconductors 6.2 Applications of III-V Compound Semiconductors 6.2.1 Photonic Device Applications 6.2.2 Electronic Device Applications 6.3 Fundamentals of CVD Processes for III-V Compound Semiconductors 6.3.1 Historical Overview of MOCVD Technology 6.3.2 Chemical Reactions in MOCVD Growth 6.3.3 Thermodynamics, Kinetics and Hydrodynamics of the MOCVD Process 272 273 279 279 280 285 286 286 287 290 Contents 6.3.4 Growth Mechanisms of the MOCVD Process in a Reactor Chamber 292 6.4 MOCVD Reactor Systems 293 6.4.1 Safety Apparatus and System 294 6.4.2 Gas Delivery System 296 6.4.3 Growth Chamber 299 6.4.4 Exhaust System 301 6.5 Precursors Synthesis, Purification, Analysis and Delivery 302 6.5.1 Synthesis and Purification 302 6.5.2 Analysis 305 6.5.3 Vapor Phase Transport and Measurements 305 6.5.4 Condensed Phase Group V Precursors 307 6.6 MOCVD of Specific III-V Materials 309 6.6.1 GaAs-based Materials 309 6.6.2 InP-based Materials 310 6.6.3 GaSb-based Materials 311 6.6.4 GaN-based Materials 312 6.7 MOCVD in the Future 315 6.8 Summary and Conclusions 315 References 315 Chapter 7 Chemical Vapor Deposition of Metals: W, Al, Cu and Ru Bing Luo and Wayne L. Glad/eller 7.1 Introduction 320 7.1.1 Deposition Chemistry - General Comments 320 7.1.2 Induction Periods, Selectivity, Microstructure and the Critical Role of Nucleation 322 7.2 CVD of Tungsten 322 7.2.1 Deposition on Si and SiO2 from WFń 323 7.2.2 WF6-H2 System 323 7.2.3 WFŔ-SiH4 System 324 7.2.4 Tungsten ALD 326 7.3 CVD of Aluminium 326 7.3.1 Precursors 327 7.4 CVD of Copper 331 7.4.1 Deposition from Copper(ii) Precursors 331 7.4.2 Deposition from Copper(i) Precursors 334 7.4.3 Copper ALD 336 7.5 Ruthenium CVD 337 7.5.1 Ruthenium CVD from Ru ß-Diketonates 337 7.5.2 Ru(CO)5, Ru3(CO)i2 and other Precursors Containing the CO Ligand 338 7.5.3 Ruthenium CVD from Sandwich or Half-sandwich Precursors 340 7.5.4 Ruthenium CVD from RuO4 341 7.5.5 Ruthenium ALD 344 7.6 Concluding Remarks 344 References 345 xii Contents Chapter 8 Chemical Vapour Deposition of Metal Oxides for Microelectronics Applications Anthony C. Jones, Helen C. Aspinall and Paul R. Chalker 8.1 Introduction 357 8.2 Precursor Chemistry 358 8.2.1 ß-Diketonates and Related Ligands 360 8.2.2 ß-Ketoiminates 363 8.2.3 Alkoxides 364 8.2.4 Alkylamides 369 8.2.5 Amidinates 369 8.2.6 Organometallic Precursors 370 8.3 CVD of Dielectric Oxides 372 8.3.1 CVD of ZrO2 and HfO2 372 8.3.2 CVD of Zr-and Hf-silicate 378 8.3.3 CVD of Hf-aluminate 379 8.3.4 CVD of Lanthanide Oxides 380 8.3.5 CVD of Multi-component Lanthanide Oxides 382 8.3.6 CVDofTiO2 384 8.3.7 CVDofAl2O3 386 8.3.8 CVDofTa2O5 386 8.4 CVD of Ferroelectric Metal Oxides 387 8.4.1 CVD of Pb(Zr,Ti)O3 388 8.4.2 CVD of Pb(Sc0 5Ta0 5)O3 389 8.4.3 CVDofPb(Mg0.33Nbo.66)03 391 8.4.4 CVDofSrBijíTa.vNb^.^Og 392 8.4.5 CVD of Bismuth Titanate (Bi4Ti3O12) 394 8.4.6 CVD of SrTiO3 and (Ba,Sr)TiO3 395 8.5 CVD of Conducting, Semiconducting and Magnetic Oxides 396 8.5.1 MOCVD of RuO2, LaNiO3 and LaSrCoO3 396 8.5.2 CVDofZnO 397 8.5.3 CVD of Magnetic and Magnetoelectric Oxides 397 8.6 CVD of High-Tc Superconducting Oxides 397 8.7 Conclusions 400 Acknowledgement 400 References 400 Chapter 9 Metal-organic Chemical Vapour Deposition of Refractory Transition Metal Nitrides Roland A. Fischer and Har is h Parala 9.1 Introduction and Overview 413 9.2 Applications of Transition Metal Nitrides 414 9.2.1 Diffusion Barrier Layers 414 9.2.2 Gate Electrode Applications 415 9.3 Crystal Chemistry and Materials Properties 416 9.3.1 Titanium Nitride, Zirconium Nitride and Hafnium Nitride 416 9.3.2 Niobium Nitride and Tantalum Nitride 417 9.3.3 Molybdenum Nitride and Tungsten Nitride 418 9.4 Thin Film Deposition of Transition Metal Nitrides 420 Contents xjjj 9.4.1 Precursor Chemistry for MOCVD and ALD of Nitrides 420 9.4.2 Titanium Nitride Deposition 422 9.4.3 Zirconium and Hafnium Nitride Deposition 427 9.4.4 Niobium and Tantalum Nitride Deposition 427 9.4.5 Molybdenum and Tungsten Nitride Deposition 433 9.5 Conclusions and Prospects 437 Acknowledgements 437 References 438 Chapter 10 CVD of Functional Coatings on Glass Ivan P. Parkin and Robert G. Palgrave 10.1 Introduction 451 10.1.1 Architectural Glazing 452 10.1.2 Automotive/Aerospace Glazing 452 10.1.3 Container Coating 452 10.1.4 Industrial Glass Manufacture and Coating 453 10.1.5 On-line Coating Using the Float Glass Process 453 10.1.6 On-line Coating of Glass Containers 454 10.1.7 Glass as a Substrate 455 10.1.8 Influence of Precursor Chemistry on Glass 455 10.1.9 Overview of Functional Coatings Applied to Glass 456 10.2 CVD of Transparent Conducting Coatings on Glass 456 10.2.1 Indium Tin Oxide 456 10.2.2 F, Cl, Sb Doped Tin Oxide 458 10.3 CVD of Reflective Coatings on Glass 459 10.3.1 Titanium Nitride Thin Films 459 10.4 CVD of Electrochromic and Photochromic Coatings 460 10.4.1 Introduction to Metal Oxide Based Electrochromic and Photochromic Devices 460 10.4.2 Mechanism of Electrochromism 462 10.4.3 CVD of Electrochromic and Photochromic Tungsten Oxide Coatings 464 10.4.4 Atmospheric Pressure CVD of WO3 464 10.4.5 Aerosol-assisted CVD of WO3 466 10.5 Vanadium Dioxide Thermochromic Coatings 467 10.5.1 Introduction to Thermochromic VO2 467 10.5.2 Atmospheric Pressure CVD of VO2 468 10.5.3 Low Pressure CVD of VO2 471 10.6 Self-cleaning Coatings on Glass 472 References 473 Chapter 11 Photo-assisted CVD Stuart J. C. Irvine and Dan Lamb 11.1 Introduction 477 11.2 Principles of Photo-assisted CVD 477 11.2.1 Photothermal Processes 478 11.2.2 Photolysis 479 xiv Contents 11.2.3 Photocatalysis 482 11.2.4 Photosensitization 486 11.3 Lamps and Lasers for Photolysis 487 11.4 Further Examples of Photolysis in Photo-assisted CVD 489 11.5 Conclusions 492 References 492 Chapter 12 Plasma Enhanced Chemical Vapour Deposition Processes Sergei E. Ale.xandror and Michael L. Hitclmum 12.1 Introduction 494 12.2 Remote Plasma Enhanced CVD (RPECVD) Processes 495 12.2.1 Introduction 495 12.2.2 Advantages and Disadvantages of RPECVD 496 12.2.3 RPECVD of Silicon Nitride Films 500 12.3 Atmospheric Pressure PECVD (AP-PECVD) using Non-thermal Plasmas 510 12.3.1 Introduction 510 12.3.2 Sources of Atmospheric Pressure, Non-thermal Plasmas 510 12.3.3 Applications of Electrical Discharges for AP-PECVD 511 12.4 Conclusions 530 References 530 Chapter 13 Commercial Aspects of CVD Albert Barry Lee se and Alan Rodne v Mills 13.1 CVD Industries Introduction 535 13.1.1 Glass Coatings 536 13.1.2 Silicon Devices 537 13.1.3 Compound Semiconductors 538 13.2 Industry Structure 541 13.2.1 The Sheet Glass Industry 541 13.2.2 The Silicon Industry 541 13.2.3 The ПІ -V LED Industry 542 13.2.4 III-V Semiconductor Lasers 543 13.3 Precursor Selection 544 13.4 Commercial Considerations 544 13.4.1 Silicon 544 13.4.2 Compound Semiconductors 545 13.4.3 Architectural Glass Coating 546 13.4.4 Thin Film Transistor (TFT) and Solar Applications 546 13.5 Health, Safety and Analytical 546 13.5.1 Health and Safety 546 13.5.2 Analytical Requirements 547 13.6 Typical Precursors for the Silicon Semiconductor Industry 548 13.7 III-V CVD HB Light Emitting Diode Applications 548 13.7.1 Historical LED Production 548 13.7.2 Overview of CVD Processes 550 13.7.3 Hand Held Devices and Display Backlighting 552 Contents xv 13.7.4 Large Display Backlighting 552 13.7.5 Portable Lighting 553 13.7.6 Automotive and Vehicle Uses 555 13.7.7 Signage and Channel Letters 557 13.7.8 Signals - Traffic 559 13.7.9 Aviation Lighting 559 13.7.10 Marine Lighting 560 13.7.11 General Lighting and Illumination 561 13.7.12 Group III-V High Frequency Devices 564 13.7.13 Group III-V Semiconductor Diode Lasers 566 13.7.14 Solar Cells 567 13.7.15 Silicon Carbide Applications 569 Subject Index 571
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title Chemical vapour deposition precursors, processes and applications
title_auth Chemical vapour deposition precursors, processes and applications
title_exact_search Chemical vapour deposition precursors, processes and applications
title_full Chemical vapour deposition precursors, processes and applications ed. by Anthony C. Jones ; Michael L. Hitchman
title_fullStr Chemical vapour deposition precursors, processes and applications ed. by Anthony C. Jones ; Michael L. Hitchman
title_full_unstemmed Chemical vapour deposition precursors, processes and applications ed. by Anthony C. Jones ; Michael L. Hitchman
title_short Chemical vapour deposition
title_sort chemical vapour deposition precursors processes and applications
title_sub precursors, processes and applications
topic CVD-Verfahren (DE-588)4009846-1 gnd
topic_facet CVD-Verfahren
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