VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology
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Pennington, N.J.
Electrochemical Society
1985
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| Schriftenreihe: | Proceedings / American Electrochemical Society
85,5 |
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Datensatz im Suchindex
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|---|---|
| adam_text | PROCEEDINGS OFTHETHIRD INTERNATIONAL SYMPOSIUM ONVERY LARGE SCALE
INTEGRATION SCIENCE AND TECHNOLOGY VLSI SCIENCE AND TECHNOLOGY/1985
EDITED BY W.M. BULLIS SILTEC SILICON MOUNTAIN VIEW, CALIFORNIA S. BROYDO
ZYMOS CORPORATION SUNNYVALE, CALIFORNIA ASSISTANT EDITORS J. ANDREWS G.
CELLER M. DELFINO C. OSBURN M. RAND R, REIF A. REISRNAN G. RIGA T.
SEDGWICK P. WANG ^ UB/TIB HANNOVER 89 120 903849 UNIVERSITATSBIBLIOTHEK
HANNOVER TECHN1SCHE INFORMATIONSBIBLIOTHEK ELECTRONICSAND DIELECTRICSAND
INSULATION DIVISIONS PROCEEDINGS VOLUME 85-5 THE ELECTROCHEMICAL
SOCIETY, INC., 10 SOUTH MAIN ST., PENNINGTON, NJ 08534-2896 RN &-:O (
TABLE OF CONTENTS PREFACE III TRENDS IN VLSI TECHNOLOGY 1 INSIGHTS INTO
COMTAMINATION CONTROL FOR VLSI PROCESSING, D. L. TOLLIVER (INVITED) 3
PROCESS-INDUCED RADIATION DAMAGE IN VLSI CIRCUIT PRODUCTION, C. M.
DOZIER (INVITED) 33 THE SCALING OF VLSI; THE RELIABILITY IMPACT ON
TECHNOLOGY, M. H. WOODS (INVITED) 41 CMOS TECHNOLOGY 57 SUBMICRON CMOS
TECHNOLOGY AND PROCESS INTEGRATION FOR VLSI STATIC MEMORIES, H. NOZAWA,
J. MATSUNAGA AND K. HASHIMOTO (INVITED) 59 A CMOS TECHNOLOGY USING
SILICON PREAMORPHISATION AND SILICIDATION TO FORM SHALLOW LOW RESISTANCE
SOURCES AND DRAINS, A. L. BUTLER AND D. J. POSTER 71 IMPROVED P-WELL
CMOS LATCH-UP IMMUNITY AND DEVICE PERFORMANCE THROUGH INTRINSIC
GETTERING TECHNIQUES J. 0. BORLAND AND R. S. SINGH 77 IMPROVED N-WELL
CMOS LATCH-UP IMMUNITY THROUGH THE OPTIMIZATION OP EPILAYER THICKNESS
AND RESISTIVITY, K. H. CHOI, J. 0. BORLAND AND S.-K. HAHN 88 EFFECTS OF
N-TYPE SUBSTRATE ON EPILAYER QUALITY FOR TWIN TUB CMOS TECHNOLOGY, S.-K.
HAHN, J. 0. BORLAND AND C.-C. D. WONG 96 OUTDIFFUSION, DEFECTS AND
GETTERING BEHAVIOR OF EPITAXIAL N/N+ AND P/P+ WAFERS USED FOR CMOS
TECHNOLOGY, F. SECCO D ARAGONA, J. W. ROSE, AND P. L. FEJES 106
ELECTRICAL CHARACTERIZATION OF EPITAXIAL WAFERS FOR USE IN CMOS, P. L.
FEJES, F. SECCO D ARAGONA AND J. W. ROSE 118 METAL INTERCONNECT
TECHNOLOGY 129 HIGHLY RELIABLE MO GATE AND INTERCONNECTION TECHNOLOGY,
H. OIKAWA AND T. AMAZAWA (INVITED) 131 SOME BASIC PROBLEMS IN VLSI
INTERCONNECT, P. S. HO (INVITED) 146 MULTILEVEL ALUMINUM METALLIZATION
FOR VLSI, K. OKUMURA AND T. MORIYA (INVITED) 163 THICK FILM STRIPLINE
MICRO TRANSMISSION LINE INTERCONNECTIONS FOR WAFER SCALE INTEGRATION, A.
S. BERGENDAHL, J. F. MACDONALD, R. H. STEIN- VORTH AND G. F. TAYLOR 175
CORROSION EVALUATION OF METAL FILMS PATTERNED BY REACTIVE ION ETCHING,
J. BUKHMAN, R. GOODNER AND T. HULSEWEH 185 SILICIDES AND DIELECTRICS 193
MOLYBDENUM SILICIDE FORMATION BY ION BEAM MIXING AND RAPID THERMAL
ANNEALING, D. L. KWONG, D. C. MEYERS AND N. S. ALVI 195 A SELF-ALIGNED
TITANIUM POLYCIDE GATE AND INTER CONNECT FORMATION SCHEME USING RAPID
THERMAL ANNEALING, A. WANG AND J. HEN 203 STUDY OF TIW/SI INTERACTION
FOR VLSI CONTACT, M. J. KIM, R. N. SINGH, D. M. BROWN AND D. W. SKELLY
213 FAILURE OF NITRIDE OXIDATION MASK PATTERNED BY A DRY ETCH PROCESS,
R. H. REUSS, D. F. WESTON, J. F. BROWN AND T. P. REMMEL 223 SPIN-ON BPSG
AND ITS APPLICATION TO VLSI, S. L. CHANG, K. Y. TSAO, M. A. MENESHIAN
AND H. A. WAGGENER 231 LOW LEVEL IMPURTIY MEASUREMENT IN SPUTTERED
DIELECTRIC FILMS USING THE ATOMIC ABSORPTION SPECTROPHOTOMETER, M. A.
MENESHIAN, K.Y. TSAO AND H. A. WAGGENER 237 COMPLETELY CONSUMED CARBIDE
(C3) - A NEW PRO CESS FOR DIELECTRIC ISOLATION, W.-J. LU, A. J. STECKL
AND T. P. CHOW 244 LITHOGRAPHY AND PATTERNING 253 ELECTRON BEAM
TECHNOLOGY AND FUTURE LITHOGRAPHY OVERVIEW, Y. IIDA (INVITED) 255 HIGH
PERFORMANCE ELECTRON RESIST FOR SUBMICRON E-BEAM LITHOGRAPHY, J. H. LAI.
R. B. DOUGLAS, K. MAO, W. L. LARSON AND Y.-W. YAU 274 MEASUREMENT,
ANALYSIS AND CONTROL OF SMALL RESIST FEATURES, H. R. ROTTMANN (INVITED)
279 ELECTRICAL LINEWIDTH MEASUREMENT IN THE NEAR- AND SUB-MICRON
LINEWIDTH REGION, L. W. LINHOLM, D. YEN AND M. W. CRESSWELL 299 REACTIVE
ION ETCH OF TUNGSTEN SILICIDE AND POLYSILICON, S.-S. TAI 309 PLASMA
ETCHING OF POLY SI IN SFG + CI, MIXTURES, H. H. WANG 316 OXIDATION 327
AMBIENT EFFECTS ON THE SI-SIO, INTERFACE MORPHOLOGY OF CLORINATED
OXIDES, C. CLAEYS, J. VANHELLEMONT, G. DECLERCK, J. VAN LANDUYT, R. VAN
OVERSTRAETEN, AND S. ANTELINCKX 329 NITRIDED SI02 FILMS FOR VLSI
APPLICATIONS, A. K. RAY, C. J. MERZ AND T. N. NGUYEN 339 RELIABILITY OF
THIN GATE DIELECTRICS FOR VLSI, R. SINGH, G. G. KUMAR AND K. C. TAYLOR
349 PROCESS DEPENDENCE OF HOT ELECTRON INJECTION IN MOSFET S, J. TZOU,
C. YAO, R. CHEUNG AND H. CHAN 359 POST-OXIDATION ANNEALING EFFECTS UPON
SILICON DIOXIDE DIELECTRIC BREAKDOWN, 0. LU AND S.-S. TAI 369 IMPROVED
ELECTRICAL BREAKDOWN CHARACTERISTICS OF THIN SIO, FILMS PROCESSED BY A
TWO-STEP OXIDATION TREATMENT, A. BHATTACHARYYA, C. VORST AND A. H. CARIM
374 THE CHARACTERISTICS AND MORPHOLOGY OF OXIDATION OF POLYCRYSTALLINE
SILICON FILMS IN VLSI, Y.-Y. WANG AND A.-Z. ZHANG 384 THE
CHARACTERISTICS OF POLYSILICON FILMS OXIDIZED IN HIGH PRESSURE OXIDATION
SYSTEM FOR VLSI APPLI CATIONS, A.-Z. ZHANG AND Y.-Y. WANG 391 VII
SILICON MATERIALS TECHNOLOGY 397 MATERIAL CHARACTERIZATION FOR VLSI
APPLICATIONS, S. KISHINO (INVITED) 399 LIFETIME AND RECOMBINATION
CONCEPTS FOR OXYGEN- PRECIPITATED SILICON, D. K. SHRODER, J. M. HWANG,
J. S. KANG, A. M. GOODMAN AND B. L. SOPORI 419 TEST METHODS FOR OXYGEN
PRECIPITATION IN SILICON, H.-D. CHIOU AND L. W. SHIVE 429 THE INDUCTION
EFFECT FOR OXYGEN-PRECIPITATE NUCLEATION IN SILICON: EVIDENCE OF A
PRECURSOR, P. FRAUNDORF, G. K. FRAUNDORF AND R. A. CRAVEN 436 OXYGEN
PRECIPITATION BEHAVIOR IN HIGH CARBON CZ SILICON, C. Y. KUNG 446 RAPID
THERMAL ANNEALING FOR OXYGEN DONOR ANNIHILATION, W. C. O MARA, J. E.
PARKER, P. BUTLER AND A. GAT 456 MODELING DIFFUSION IN SILICON:
ACCOMPLISHMENTS AND CHALLENGES, S. M. HU (1985 ELECTRONICS DIVISION
AWARD ADDRESS) 465 OXYGEN BEHAVIOR IN HEAVILY SB-DOPED CZ-SILICON, F.
SHIMURA, W. DYSON, J. W. MOODY AND R. S. HOCKETT 507 INFRARED OPTICAL
MEASUREMENT OF INTERSTITIAL OXYGEN CONTENT IN HEAVILY DOPED SILICON
CRYSTALS, H. TSUYA, M. KANAMORI, M. TAKEDA AND K. YASUDA 517
INCORPORATION OF OXYGEN IMPURITY INTO SILICON CRYSTALS DURING
CZOCHRALSKI GROWTH, H. HARADA, T. ITOH, N. OZAWA, AND T. ABE 526 CARBIDE
MICRO-INCLUSION IN SEMICONDUCTOR SILICON AND ITS ORIGIN, Q. WAN AND
Y.-Z. LI 536 THE CHARACTERISTICS OF NITROGEN IN SILICON CRYS TALS, T.
ABE, T. MASUI, H. HARADA, AND J. CHIKAWA 543 AUTHOR INDEX 553 SUBJECT
INDEX 555 VIII
|
| any_adam_object | 1 |
| author2 | Bullis, William Murray |
| author2_role | edt |
| author2_variant | w m b wm wmb |
| author_facet | Bullis, William Murray |
| building | Verbundindex |
| bvnumber | BV025245085 |
| classification_rvk | ZN 4950 |
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| dewey-full | 621.395 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.395 |
| dewey-search | 621.395 |
| dewey-sort | 3621.395 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV025245085 |
| illustrated | Not Illustrated |
| indexdate | 2024-12-23T23:45:02Z |
| institution | BVB |
| institution_GND | (DE-588)6013001-5 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019882959 |
| oclc_num | 247460155 |
| open_access_boolean | |
| owner | DE-11 |
| owner_facet | DE-11 |
| physical | VIII, 564 S. |
| publishDate | 1985 |
| publishDateSearch | 1985 |
| publishDateSort | 1985 |
| publisher | Electrochemical Society |
| record_format | marc |
| series2 | Proceedings / American Electrochemical Society |
| spellingShingle | VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology Konferenz (DE-588)4032055-8 gnd CMOS (DE-588)4010319-5 gnd Werkstoff (DE-588)4065579-9 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd Elektronik (DE-588)4014346-6 gnd Technologie (DE-588)4059276-5 gnd Silicium (DE-588)4077445-4 gnd VLSI (DE-588)4117388-0 gnd Dielektrikum (DE-588)4149716-8 gnd |
| subject_GND | (DE-588)4032055-8 (DE-588)4010319-5 (DE-588)4065579-9 (DE-588)4027242-4 (DE-588)4191584-7 (DE-588)4014346-6 (DE-588)4059276-5 (DE-588)4077445-4 (DE-588)4117388-0 (DE-588)4149716-8 (DE-588)1071861417 |
| title | VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology |
| title_auth | VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology |
| title_exact_search | VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology |
| title_full | VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology ed. by W. M. Bullis ... |
| title_fullStr | VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology ed. by W. M. Bullis ... |
| title_full_unstemmed | VLSI science and technology 1985 Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology ed. by W. M. Bullis ... |
| title_short | VLSI science and technology 1985 |
| title_sort | vlsi science and technology 1985 proceedings of the third international symposium on very large scale integration science and technology |
| title_sub | Proceedings of the Third International Symposium on Very Large Scale Integration Science and Technology |
| topic | Konferenz (DE-588)4032055-8 gnd CMOS (DE-588)4010319-5 gnd Werkstoff (DE-588)4065579-9 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd Elektronik (DE-588)4014346-6 gnd Technologie (DE-588)4059276-5 gnd Silicium (DE-588)4077445-4 gnd VLSI (DE-588)4117388-0 gnd Dielektrikum (DE-588)4149716-8 gnd |
| topic_facet | Konferenz CMOS Werkstoff Integrierte Schaltung Lithografie Halbleitertechnologie Elektronik Technologie Silicium VLSI Dielektrikum Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019882959&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001900941 |
| work_keys_str_mv | AT bulliswilliammurray vlsiscienceandtechnology1985proceedingsofthethirdinternationalsymposiumonverylargescaleintegrationscienceandtechnology AT internationalsymposiumonverylargescaleintegrationscienceandtechnologytoronto vlsiscienceandtechnology1985proceedingsofthethirdinternationalsymposiumonverylargescaleintegrationscienceandtechnology |